H10D 30/6741
Group iv materials
Official title: {Group IV materials, e.g. germanium or silicon carbide (TFTs having oxide semiconductors H10D30/6755)}
H10D30/6741 (Group iv materials) appears on 8,328 US grants and 8,438 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,328
- Published applications
- 8,438
- Assignees
- 924
- Inventors
- 8,904
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 4 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 6 | 0 |
| 1986 | 11 | 0 |
| 1987 | 23 | 0 |
| 1988 | 18 | 0 |
| 1989 | 20 | 0 |
| 1990 | 15 | 0 |
| 1991 | 37 | 0 |
| 1992 | 41 | 0 |
| 1993 | 45 | 0 |
| 1994 | 51 | 0 |
| 1995 | 38 | 0 |
| 1996 | 65 | 0 |
| 1997 | 73 | 0 |
| 1998 | 100 | 0 |
| 1999 | 111 | 0 |
| 2000 | 100 | 0 |
| 2001 | 131 | 79 |
| 2002 | 182 | 242 |
| 2003 | 210 | 249 |
| 2004 | 222 | 319 |
| 2005 | 218 | 409 |
| 2006 | 263 | 370 |
| 2007 | 251 | 338 |
| 2008 | 229 | 329 |
| 2009 | 267 | 278 |
| 2010 | 307 | 215 |
| 2011 | 254 | 264 |
| 2012 | 257 | 284 |
| 2013 | 272 | 261 |
| 2014 | 276 | 283 |
| 2015 | 307 | 326 |
| 2016 | 390 | 549 |
| 2017 | 468 | 536 |
| 2018 | 484 | 531 |
| 2019 | 534 | 558 |
| 2020 | 489 | 512 |
| 2021 | 368 | 407 |
| 2022 | 319 | 324 |
| 2023 | 273 | 294 |
| 2024 | 278 | 235 |
| 2025 | 213 | 169 |
| 2026 | 99 | 77 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with active layers doped by sacrificial layers and method thereof29 Sep 2026US 12,751,064 B2Samsung Electronics Co., Ltd.
- Array substrate, display panel and display device29 Sep 2026US 12,751,089 B2Wuhan China Star Optoelectronics Technology Co., Ltd.
- Display device including an oxide semiconductor pattern15 Sep 2026US 12,740,258 B2LG Display Co., Ltd.
- Organic light emitting diode display device including vertically stacked electrodes on driving transistor8 Sep 2026US 12,731,540 B2Samsung Display Co., Ltd.
- Complementary transistor and semiconductor device8 Sep 2026US 12,733,254 B2Sony Group Corporation
- Semiconductor device including conductive layers and cell capacitor8 Oct 2026US 2026/0313961 A1Samsung Electronics Co., Ltd.
- Ferroelectric memory device1 Oct 2026US 2026/0304778 A1Samsung Electronics Co., Ltd.
- Thin film transistor array substrate including oxide semiconductor pattern and display device including the same24 Sep 2026US 2026/0293216 A1LG Display Co., Ltd.
- Memory cell and semiconductor memory device with the same17 Sep 2026US 2026/0282321 A1SK hynix Inc.
- Epi barrier aligned backside contact17 Sep 2026US 2026/0282472 A1Intel Foundry IP LLC
Most cited
By later US patents
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Method for manufacturing a semiconductor device1,352US 5,643,826 ASemiconductor Energy Laboratory Co.Ltd. · 1997
- Method for manufacturing a semiconductor device972US 5,923,962 ASemiconductor Energy Laboratory Co.Ltd. · 1999
- Silicide regions in vertical gate all around (VGAA) devices and methods of forming same841US 9,412,817 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method and apparatus to connect consumer to expert791US 6,223,165 B1Keen.com, Inc. · 2001