Semiconductor device with active layers doped by sacrificial layers and method thereof

A semiconductor device comprising:

• a substrate including an active region and a dummy region;
• an active pattern on the active region and a dummy pattern on the dummy region;
• a channel pattern and a source/drain pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns spaced apart from each other and vertically stacked;
• a dummy stacked pattern on the dummy pattern, the dummy stacked pattern horizontally spaced apart from the channel pattern and the source/drain pattern, and the dummy stacked pattern including a plurality of dummy sacrificial layers and a plurality of dummy layers, wherein the plurality of dummy sacrificial layers and the plurality of dummy layers are alternately stacked;
• and
• a gate electrode on the plurality of semiconductor patterns, the gate electrode including an inner electrode interposed between adjacent semiconductor patterns among the plurality of semiconductor patterns,
• wherein each of the plurality of dummy sacrificial layers includes a dopant having an atomic weight greater than an atomic weight of each of silicon-germanium (SiGe) and silicon (Si), and
• wherein a concentration of the dopant in the plurality of dummy sacrificial layers is in a range from greater than 1.0×1020 atoms/cm3 to 1.0×1021 atoms/cm3,
• wherein the plurality of dummy layers include the dopant diffused from the plurality of dummy sacrificial layers, and
• wherein a concentration of the diffused dopant is 1.0×1017 atoms/cm3 to 1.0×1018 atoms/cm3.