Epi barrier aligned backside contact
AssigneeIntel Foundry IP LLC
InventorsLeonard P. GULER, Mohammad HASAN, Mohit K. HARAN, Mauro J. KOBRINSKY, Charles H. WALLACE, Tahir GHANI
Life of this patent
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Abstract
Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a vertical stack of semiconductor channels, a source on a first side of the vertical stack of semiconductor channels, and a drain on a second side of the vertical stack of semiconductor channels, In an embodiment, a metal is below the source and in direct contact with the source, where a centerline of the metal is substantially aligned with a centerline of the source.
Claims20
An integrated circuit structure, comprising:
- a vertical stack of horizontal nanowires;
- a first epitaxial source or drain structure at a first side of the vertical stack of horizontal nanowires;
- a second epitaxial source or drain structure at a second side of the vertical stack of horizontal nanowires;
- and
- a conductive contact structure below and in direct contact with the first epitaxial source or drain structure, wherein the conductive contact structure has an uppermost surface below a bottommost surface of the first epitaxial source or drain structure, and wherein the conductive contact structure has a lateral width in a cross-sectional view greater than a maximum lateral width of the epitaxial source or drain structure in the cross-sectional view.
An integrated circuit structure, comprising:
- a fin;
- a first epitaxial source or drain structure at a first side of the fin;
- a second epitaxial source or drain structure at a second side of the fin;
- and
- a conductive contact structure below and in direct contact with the first epitaxial source or drain structure, wherein the conductive contact structure has an uppermost surface below a bottommost surface of the first epitaxial source or drain structure, and wherein the conductive contact structure has a lateral width in a cross-sectional view greater than a maximum lateral width of the epitaxial source or drain structure in the cross-sectional view.
A computing device, comprising:
- a board;
- and
- a component coupled to the board, the component including an integrated circuit structure, comprising:
- a vertical stack of horizontal nanowires or fin;
- a first epitaxial source or drain structure at a first side of the vertical stack of horizontal nanowires or fin;
- a second epitaxial source or drain structure at a second side of the vertical stack of horizontal nanowires or fin;
- and
- a conductive contact structure below and in direct contact with the first epitaxial source or drain structure, wherein the conductive contact structure has an uppermost surface below a bottommost surface of the first epitaxial source or drain structure, and wherein the conductive contact structure has a lateral width in a cross-sectional view greater than a maximum lateral width of the epitaxial source or drain structure in the cross-sectional view.
Dependencies are inferred from the claim text.