Method for manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang
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Abstract
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
Claims32
A method for manufacturing a semiconductor device comprising the steps of:
- preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon;
- disposing said solution in contact with at least a portion of a semiconductor film comprising silicon on an insulating surface;
- forming a continuous layer containing said catalyst in contact with said semiconductor film;
- and
- crystallizing said semiconductor film by heating,
- wherein said catalyst is included in said solution at a concentration of 200 ppm or lower.
A method for manufacturing a semiconductor device comprising the steps of:
- preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon;
- disposing said solution in contact with at least a first region of a semiconductor film comprising silicon on an insulating surface;
- forming a continuous layer including said catalyst in contact with said first region of said semiconductor film;
- and
- heating said semiconductor film in order that crystals grow from said first region toward a second region of the semiconductor film adjacent to said first region in a direction parallel with a surface of said semiconductor film;
- patterning said semiconductor film into an island to form an active region of said semiconductor, said island excluding said first region of the semiconductor film,
- wherein said semiconductor film comprises said catalyst at a concentration not higher than 1.times.10.sup.19 cm.sup.-3.
A method for manufacturing a semiconductor device comprising the steps of:
- preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon;
- disposing said solution in contact with at least a first portion of a semiconductor film comprising silicon on an insulating surface;
- heating said semiconductor film in order that crystals grow from said first portion toward a second portion of the semiconductor film to which said crystallization promoting material is not added, and
- forming said semiconductor device by using said second portion of the semiconductor film as an active region of said semiconductor device, said active region excluding said first portion,
- wherein said semiconductor film comprises said catalyst at a concentration of 1.times.10.sup.19 atoms/cm.sup.3 or less.
A method for manufacturing a semiconductor device comprising the steps of:
- preparing a solution containing a substance dissolved or dispersed in a liquid, said substance containing a catalyst for promoting a crystallization of silicon, and said liquid including an interfacial active agent;
- disposing said solution in contact with a semiconductor film comprising silicon on an insulating surface;
- forming a continuous layer containing said catalyst in contact with said semiconductor film;
- and then
- crystallizing said semiconductor film by heating.
A method for manufacturing a semiconductor device comprising the steps of:
- preparing a solution containing a substance dissolved or dispersed in a liquid, said substance containing a catalyst for promoting a crystallization of silicon;
- forming a semiconductor film on an insulating film;
- forming a thin oxide film in contact with said semiconductor film;
- disposing said solution in contact with at least a portion of said semiconductor film through said thin oxide film;
- forming a continuous layer including said substance in contact with said semiconductor film;
- and then
- crystallizing said semiconductor film by heating.
Dependencies are inferred from the claim text.