Display device including an oxide semiconductor pattern

A display device comprising:

• a substrate including a display area and a non-display area disposed around the display area;
• a lower buffer layer on the substrate, the lower buffer layer including at least one insulating layer;
• a first transistor on the lower buffer layer, the first transistor including a first semiconductor pattern and a first gate electrode on the first semiconductor pattern;
• an upper buffer layer covering the first transistor, the upper buffer layer including at least one inorganic insulating layer;
• a second transistor on the upper buffer layer, the second transistor including a second semiconductor pattern and a second gate electrode on the second semiconductor pattern;
• and
• a second light shielding pattern between the substrate and the second transistor, the second light shielding pattern including a semiconductor material layer doped with P-type impurity ions.