H10D 30/6736
Characterised by the shape of gate insulators
Official title: {characterised by the shape of gate insulators}
H10D30/6736 (Characterised by the shape of gate insulators) appears on 229 US grants and 378 published applications in this corpus.
Search patents in H10D- Granted patents
- 229
- Published applications
- 378
- Assignees
- 97
- Inventors
- 747
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 2 | 1 |
| 2010 | 1 | 2 |
| 2011 | 1 | 2 |
| 2012 | 1 | 2 |
| 2013 | 2 | 4 |
| 2014 | 4 | 7 |
| 2015 | 5 | 26 |
| 2016 | 17 | 28 |
| 2017 | 32 | 39 |
| 2018 | 36 | 34 |
| 2019 | 30 | 19 |
| 2020 | 17 | 18 |
| 2021 | 14 | 21 |
| 2022 | 7 | 11 |
| 2023 | 17 | 18 |
| 2024 | 16 | 26 |
| 2025 | 11 | 47 |
| 2026 | 16 | 71 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Semiconductor devices8 Sep 2026US 12,733,207 B2Samsung Electronics Co., Ltd.
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- Semiconductor device having a two-dimensional channel and method for fabricating the same25 Aug 2026US 12,720,800 B2Samsung Electronics Co., Ltd.
- Thin-film transistors with gate-source capacitance tuning30 Jun 2026US 12,672,308 B2Zinite Corporation
- Thin-film transistors with gate-source capacitance tuning24 Sep 2026US 2026/0293201 A1Zinite Corporation
- Semiconductor device and memory device24 Sep 2026US 2026/0293205 A1Semiconductor Energy Laboratory Co.Ltd.
- Inverter including oxide semiconductor, memory device including inverter, and electronic apparatus including memory device24 Sep 2026US 2026/0293213 A1Samsung Electronics Co., Ltd.
- Semiconductor device and preparation method therefor, and memory and electronic device17 Sep 2026US 2026/0282342 A1Beijing Superstring Academy of Memory Technology
- Transistor17 Sep 2026US 2026/0282496 A1STMicroelectronics (Crolles 2) SAS
Most cited
By later US patents
- Semiconductor element, semiconductor device, and method for manufacturing the same227US 8,501,564 B2Semiconductor Energy Laboratory Co.Ltd. · 2013
- Stacked complementary FETs featuring vertically stacked horizontal nanowires130US 9,837,414 B1International Business Machines Corporation · 2017
- Vertical transistor with air gap spacers72US 9,443,982 B1International Business Machines Corporation · 2016
- Inner spacer formation for nanosheet field-effect transistors with tall suspensions60US 10,014,390 B1Globalfoundries Inc. · 2018
- Vertical FETs with variable bottom spacer recess60US 9,437,503 B1International Business Machines Corporation · 2016