H10D 30/6729
Characterised by the electrodes
Official title: {characterised by the electrodes}
H10D30/6729 (Characterised by the electrodes) appears on 19,465 US grants and 24,108 published applications in this corpus.
Search patents in H10D- Granted patents
- 19,465
- Published applications
- 24,108
- Assignees
- 1,429
- Inventors
- 17,601
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 6 | 0 |
| 1980 | 7 | 0 |
| 1981 | 10 | 0 |
| 1982 | 11 | 0 |
| 1983 | 9 | 0 |
| 1984 | 7 | 0 |
| 1985 | 7 | 0 |
| 1986 | 22 | 0 |
| 1987 | 23 | 0 |
| 1988 | 26 | 0 |
| 1989 | 27 | 0 |
| 1990 | 28 | 0 |
| 1991 | 57 | 0 |
| 1992 | 50 | 0 |
| 1993 | 53 | 0 |
| 1994 | 79 | 0 |
| 1995 | 66 | 0 |
| 1996 | 100 | 0 |
| 1997 | 119 | 0 |
| 1998 | 171 | 0 |
| 1999 | 147 | 0 |
| 2000 | 155 | 0 |
| 2001 | 205 | 125 |
| 2002 | 277 | 373 |
| 2003 | 337 | 371 |
| 2004 | 339 | 481 |
| 2005 | 336 | 615 |
| 2006 | 389 | 522 |
| 2007 | 368 | 550 |
| 2008 | 380 | 486 |
| 2009 | 403 | 482 |
| 2010 | 493 | 418 |
| 2011 | 437 | 575 |
| 2012 | 445 | 587 |
| 2013 | 536 | 564 |
| 2014 | 639 | 686 |
| 2015 | 721 | 944 |
| 2016 | 970 | 1240 |
| 2017 | 1162 | 1300 |
| 2018 | 1130 | 1238 |
| 2019 | 1267 | 1200 |
| 2020 | 1064 | 1187 |
| 2021 | 929 | 1185 |
| 2022 | 921 | 1433 |
| 2023 | 898 | 1855 |
| 2024 | 1153 | 2070 |
| 2025 | 1388 | 2458 |
| 2026 | 1087 | 1163 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor memory devices with dielectric fin structures6 Oct 2026US 12,755,790 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective deposition of gate dielectric layer of semiconductor device and the semiconductor device manufactured thereby6 Oct 2026US 12,757,424 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Conductive bridge through dielectric wall between source or drain contacts6 Oct 2026US 12,757,439 B2Intel Corporation
- Semiconductor structure and method for forming the same6 Oct 2026US 12,757,440 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contact formation with staggered gate patterning6 Oct 2026US 12,757,441 B2International Business Machines Corporation
- Display device8 Oct 2026US 2026/0311650 A1Samsung Display Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0311745 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor structure and method for manufacturing the same8 Oct 2026US 2026/0313867 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-channel ferroelectric memory structure8 Oct 2026US 2026/0313908 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Three dimensional semiconductor device with memory stack8 Oct 2026US 2026/0313917 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film4,076US 7,061,014 B2Japan Science and Technology Agency · 2006
- Semiconductor device4,046US 7,297,977 B2Hewlett-Packard Development Company, L. P. · 2007
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004
- Thin film transistor and matrix display device3,999US 6,563,174 B2Sharp Kabushiki Kaisha · 2003
- Combined binary oxide semiconductor device3,995US 7,282,782 B2Hewlett-Packard Development Company, L. P. · 2007