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US 7,282,782 B2Granted
Combined binary oxide semiconductor device
AssigneeHewlett-Packard Development Company, L.P.
InventorsRandy L. Hoffman, Peter P. Mardilovich, Gregory S. Herman
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Abstract
A semiconductor device can include a channel including a first binary oxide and a second binary oxide.
Claims38
A semiconductor device, comprising:
- a drain electrode;
- a source electrode;
- a channel contacting the drain electrode and the source electrode, wherein the channel includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO;
- a gate electrode;
- and
- a gate dielectric positioned between the gate electrode and the channel.
3 more elements
A semiconductor device, comprising:
- a drain electrode;
- a source electrode;
- means for carrying electron flow to electrically couple the drain electrode and the source electrode, wherein the means for carrying electron flow includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO;
- a gate electrode;
- and
- a gate dielectric positioned between the gate electrode and the channel.
3 more elements
A semiconductor device formed by the steps, comprising:
- providing a drain electrode;
- providing a source electrode;
- providing a precursor composition including a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO, and MgO;
- depositing a channel from the precursor composition contacting the drain electrode and the source electrode;
- providing a gate electrode;
- and
- providing a gate dielectric positioned between the gate electrode and the channel.
4 more elements
A display device, comprising:
- a plurality of display elements configured to operate collectively to display images, where each of the display elements includes a semiconductor device configured to control light emitted by the display element, the semiconductor device including:
- a drain electrode;
- a source electrode;
- a channel contacting the drain electrode and the source electrode, wherein the channel includes a first binary oxide selected from SrO and CaO and a second binary oxide selected from CdO, ZnO and MgO;
- a gate electrode;
- and
- a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.
4 more elements
Dependencies are inferred from the claim text.