H10D 30/6737
Characterised by the electrode materials
Official title: {characterised by the electrode materials}
H10D30/6737 (Characterised by the electrode materials) appears on 5,565 US grants and 5,983 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,565
- Published applications
- 5,983
- Assignees
- 832
- Inventors
- 7,554
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 5 | 0 |
| 1980 | 4 | 0 |
| 1981 | 3 | 0 |
| 1982 | 8 | 0 |
| 1983 | 6 | 0 |
| 1984 | 4 | 0 |
| 1985 | 4 | 0 |
| 1986 | 14 | 0 |
| 1987 | 10 | 0 |
| 1988 | 15 | 0 |
| 1989 | 22 | 0 |
| 1990 | 19 | 0 |
| 1991 | 22 | 0 |
| 1992 | 18 | 0 |
| 1993 | 20 | 0 |
| 1994 | 36 | 0 |
| 1995 | 29 | 0 |
| 1996 | 42 | 0 |
| 1997 | 56 | 0 |
| 1998 | 72 | 0 |
| 1999 | 53 | 0 |
| 2000 | 66 | 0 |
| 2001 | 87 | 58 |
| 2002 | 119 | 167 |
| 2003 | 161 | 142 |
| 2004 | 134 | 195 |
| 2005 | 135 | 227 |
| 2006 | 154 | 227 |
| 2007 | 143 | 241 |
| 2008 | 145 | 222 |
| 2009 | 177 | 251 |
| 2010 | 216 | 181 |
| 2011 | 204 | 265 |
| 2012 | 188 | 239 |
| 2013 | 245 | 250 |
| 2014 | 247 | 251 |
| 2015 | 258 | 283 |
| 2016 | 295 | 351 |
| 2017 | 309 | 335 |
| 2018 | 279 | 308 |
| 2019 | 286 | 274 |
| 2020 | 243 | 260 |
| 2021 | 199 | 229 |
| 2022 | 182 | 227 |
| 2023 | 169 | 234 |
| 2024 | 189 | 244 |
| 2025 | 153 | 194 |
| 2026 | 109 | 128 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device6 Oct 2026US 12,757,446 B2Idemitsu Kosan Co., Ltd.
- High electron mobility transistor with helping gate6 Oct 2026US 12,757,447 B2Taiwan Semiconductor Manufacturing Company.Ltd
- GaN power device and manufacturing method thereof6 Oct 2026US 12,757,448 B2Peking University
- Semiconductor structure with hard mask and method for manufacturing the same22 Sep 2026US 12,745,412 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Metal chalcogenide transistors with defected channel transition layer22 Sep 2026US 12,745,426 B2Intel Corporation
- Source/drain channel interface with nitrogen-containing oxide8 Oct 2026US 2026/0313973 A1Zinite Corporation
- Semiconductor device and manufacturing method of the same8 Oct 2026US 2026/0313974 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor structure and method for manufacturing the same8 Oct 2026US 2026/0314035 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof1 Oct 2026US 2026/0304843 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Layer structures including configuration increasing operation characteristics, methods of manufacturing the same, electronic devices including layer structures, and electronic apparatuses including electronic devices1 Oct 2026US 2026/0304848 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film4,076US 7,061,014 B2Japan Science and Technology Agency · 2006
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004
- Thin film transistor and matrix display device3,999US 6,563,174 B2Sharp Kabushiki Kaisha · 2003
- Transistor and semiconductor device3,984US 7,064,346 B2Japan Science and Technology Agency · 2006
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003