Metal chalcogenide transistors with defected channel transition layer

A transistor structure comprising:

• a gate electrode coupled to a channel region of the transistor structure, wherein the channel region comprises a monocrystalline layer comprising a first metal chalcogenide material, wherein the monocrystalline layer has a composition of MXn, with M being a metal, X a chalcogen, and n>1;
• a polycrystalline layer in contact with the monocrystalline layer, the polycrystalline layer comprising a second metal chalcogenide material and having one or more grain boundaries that originate within the polycrystalline layer, and wherein the polycrystalline layer has a composition of MXpO1-p, with M being the metal, X the chalcogen, and 0<p<1;
• a gate insulator between the gate electrode and the polycrystalline layer;
• a source material coupled to a first end of the monocrystalline layer;
• and
• a drain material coupled to a second end of the monocrystalline layer.