Vertical transistor with air gap spacers
AssigneeInternational Business Machines Corporation
InventorsKarthik Balakrishnan, Kangguo Cheng, Pouya Hashemi, Alexander Reznicek
Life of this patent
Estimating the term…
Abstract
A semiconductor structure containing a vertical transistor having air gap spacers located above and below each functional gate structure is provided. Notably, a bottom air gap spacer is located between a bottommost surface of first and second functional gate structures and a topmost surface of a bottom source/drain region, and a top air gap spacer is located between a topmost surface of the first and second functional gate structures and a surface of the top source/drain region.
Claims20
A semiconductor structure comprising:
- an epitaxial semiconductor channel material structure extending from a topmost surface of a bottom source/drain region, said epitaxial semiconductor channel material structure having a bottom portion of a first thickness and an upper portion of a second thickness that is less than the first thickness;
- a first functional gate structure located on one side of the epitaxial semiconductor channel material structure;
- a second functional gate structure located on another side of the epitaxial semiconductor channel material structure;
- a top source/drain region extending from a sidewall of said top portion of said epitaxial semiconductor channel material structure and contacting exposed portions of a topmost surface of said lower portion of said epitaxial semiconductor channel material structure;
- a bottom air gap spacer located between a bottommost surface of said first and second functional gate structures and said topmost surface of said bottom source/drain region;
- and
- a top air gap spacer located between a topmost surface of said first and second functional gate structures and a surface of said top source/drain region.
A method of forming a semiconductor structure, said method comprising:
- forming an epitaxial semiconductor channel material structure extending from a topmost surface of a bottom source/drain region, said epitaxial semiconductor channel material structure having a bottom portion of a first thickness and an upper portion of a second thickness that is less than the first thickness;
- forming a top source/drain region extending from a sidewall of said top portion of said epitaxial semiconductor channel material structure and contacting exposed portions of a topmost surface of said lower portion of said epitaxial semiconductor channel material structure;
- forming a first functional gate structure on one side of the epitaxial semiconductor channel material structure, and a second functional gate structure on another side of the epitaxial semiconductor channel material structure;
- and
- forming a bottom air gap spacer between a bottommost surface of said first and second functional gate structures and said topmost surface of said bottom source/drain region, and a top air gap spacer between a topmost surface of said first and second functional gate structures and a surface of said top source/drain region.
Dependencies are inferred from the claim text.