Semiconductor device and preparation method therefor, and memory and electronic device

A method for preparing a semiconductor device, comprising:

• providing a substrate and forming a stacked structure on the substrate, wherein the stacked structure comprises dielectric layers and sacrificial layers alternately stacked in a thickness direction of the substrate, and one of the dielectric layers is adjacent to the substrate;
• forming a plurality of initial semiconductor pillars arranged at intervals in a first direction based on the stacked structure, and forming a plurality of reference word line trenches arranged at intervals in the first direction;
• wherein an initial semiconductor pillar of the plurality of initial semiconductor pillars comprises dielectric portions and sacrificial portions alternately stacked in the thickness direction, and a reference word line trench of the plurality of reference word line exposes a part of the substrate;
• removing the sacrificial portions and replacing the sacrificial portions with conductive portions;
• wherein the dielectric portions and the conductive portions alternately stacked in the thickness direction are used to form a target semiconductor pillar;
• and
• forming a target word line trench based on the reference word line trench to form a target word line structure within the target word line trench.