Inverter including oxide semiconductor, memory device including inverter, and electronic apparatus including memory device

A memory device comprising:

• a first inverter and a second inverter cyclically connected in series to form a ring oscillator;
• a first access transistor configured to permit or block access to the first inverter;
• and
• a second access transistor configured to permit or block access to the second inverter,
• wherein the first inverter comprises a first pull-up transistor and a first pull-down transistor,
• the second inverter comprises a second pull-up transistor and a second pull-down transistor,
• the first pull-up transistor and the second pull-up transistor each comprise a first channel layer comprising a p-type oxide semiconductor based on tellurium oxide, and
• the first access transistor, the second access transistor, the first pull-down transistor, and the second pull-down transistor each comprise a second channel layer comprising an n-type oxide semiconductor based on indium oxide.

An electronic apparatus comprising:

• a main memory;
• an auxiliary storage;
• a central processing unit (CPU);
• and
• an input/output device,
• wherein the CPU comprises a cache memory, an arithmetic logic unit, and a control unit,
• the cache memory comprises
• a first inverter and a second inverter cyclically connected in series to form a ring oscillator,
• a first access transistor configured to permit or block access to the first inverter, and
• a second access transistor configured to permit or block access to the second inverter,
• the first inverter comprises a first pull-up transistor and a first pull-down transistor,
• the second inverter comprises a second pull-up transistor and a second pull-down transistor,
• the first pull-up transistor and the second pull-up transistor each comprise a first channel layer comprising a p-type oxide semiconductor based on tellurium oxide, and
• the first access transistor, the second access transistor, the first pull-down transistor, and the second pull-down transistor each comprise a second channel layer comprising an n-type oxide semiconductor based on indium oxide.