H10D 30/476
Having gate trenches interrupting the 2d charge carrier gas channels
Official title: {having gate trenches interrupting the 2D charge carrier gas channels, e.g. hybrid MOS-HEMTs}
H10D30/476 (Having gate trenches interrupting the 2d charge carrier gas channels) appears on 20 US grants and 59 published applications in this corpus.
Search patents in H10D- Granted patents
- 20
- Published applications
- 59
- Assignees
- 34
- Inventors
- 136
- Latest grant
- 14 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 2 |
| 2014 | 0 | 2 |
| 2015 | 3 | 4 |
| 2016 | 7 | 2 |
| 2017 | 0 | 1 |
| 2018 | 0 | 0 |
| 2019 | 0 | 1 |
| 2020 | 2 | 1 |
| 2021 | 1 | 4 |
| 2022 | 3 | 0 |
| 2023 | 1 | 3 |
| 2024 | 0 | 0 |
| 2025 | 1 | 18 |
| 2026 | 1 | 20 |
By publication year. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Multi-channel HEMT10US 9,035,355 B2Infineon Technologies Austria AG · 2015
- Semiconductor device and manufacturing method for the same9US 9,461,122 B2Kabushiki Kaisha Toshiba · 2016
- Enhancement mode high electron mobility transistor8US 9,431,527 B1University of Electronic Science and Technology of China · 2016
- Nitride-based semiconductor device and manufacturing method thereof7US 9,129,888 B2Samsung Electronics Co., Ltd. · 2015
- Hetero junction field effect transistor and method for manufacturing the same6US 9,306,049 B2Samsung Electronics Co., Ltd. · 2016