US 12,477,769 B2 · Semiconductor device in which current collapse and leakage current between source and drain regions are suppressed

Abstract

According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, a nitride region, and a first insulating member. The third electrode includes a first electrode portion. The first electrode portion is between the first electrode and the second electrode. The first semiconductor region includes first to sixth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The sixth partial region is between the fifth and second partial regions. The second semiconductor region includes first and second semiconductor portions. The second semiconductor portion is in contact with the fifth partial region. The nitride region includes a first nitride portion being in contact with the sixth partial region. The first insulating member includes a first insulating region between the third partial region and the first electrode portion.

A semiconductor device, comprising:

a first electrode;
a second electrode, a direction from the first electrode to the second electrode being along a first direction;
a third electrode including a first electrode portion, a position of the first electrode portion in the first direction being between a position of the first electrode in the first direction and a position of the second electrode in the first direction;
a first semiconductor region including Alx1Ga1-x1N (0≤x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region, a direction from the first partial region to the first electrode being along a second direction crossing the first direction, a direction from the second partial region to the second electrode being along the second direction, a direction from the third partial region to the first electrode portion being along the second direction, a position of the fourth partial region in the first direction being between a position of the first partial region in the first direction and a position of the third partial region in the first direction, a position of the fifth partial region in the first direction being between the position of the third partial region in the first direction and a position of the second partial region in the first direction, a position of the sixth partial region in the first direction being between the position of the fifth partial region in the first direction and the position of the second partial region in the first direction;
a second semiconductor region including Alx2Ga1-x2N (x1<x2<1), the second semiconductor region including a first semiconductor portion, and a second semiconductor portion, a direction from the fourth partial region to the first semiconductor portion being along the second direction, a direction from the fifth partial region to the second semiconductor portion being along the second direction, the second semiconductor portion being in contact with the fifth partial region;
a nitride region including Aly1Ga1-y1N (x2<y1≤1), the nitride region including a first nitride portion, a direction from the sixth partial region to the first nitride portion being along the second direction, the first nitride portion being in direct contact with the sixth partial region, a direction from the second semiconductor portion to the first nitride portion being along the first direction;
and
a first insulating member including a first insulating region, the first insulating region being between the third partial region and the first electrode portion in the second direction,
wherein
a first thickness of the second semiconductor portion along the second direction is thicker than a second thickness of the first nitride portion along the second direction,
the first electrode physically contacts the first semiconductor portion, and
the second electrode is electrically connected to the first nitride portion.

9 more elements

Facts

Application

17/652,167Filed 23 Feb 2022

Priority

JP 2021-12124526 Jul 2021

Published

US 2023/0022819 A126 Jan 2023

Granted

18 Nov 2025

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 30/475
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: having wider bandgap layer formed on top of lower bandgap…
H10D 30/015
Manufacture or treatment: of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
H10D 30/476
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: having gate trenches interrupting the 2D charge carrier gas…
H10D 62/117
Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies: shapes of semiconductor bodies

Semiconductor device in which current collapse and leakage current between source and drain regions are suppressed

Life of this patent

Semiconductor device in which current collapse and leakage current between source and drain regions are suppressed

Life of this patent

Abstract

Claims21