Concentration estimation method
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsAbygael Viey, Marie-Anne Jaud, William Vandendaele
Life of this patent
Estimating the term…
Abstract
A method of estimating a nitrogen site carbon concentration, in a first epitaxial layer made of carbon-doped gallium nitride of an electronic component, including steps of: estimating an electric capacitance of a stack interposed between the first layer and a first electrode of the component; heating the component; measuring an offset of a threshold voltage of the component; and deducing therefrom a nitrogen site carbon surface concentration in the first layer.
Claims16
A method of manufacturing an electronic component, comprising steps of:
- estimating an electric capacitance of a stack interposed between a first epitaxial carbon-doped gallium nitride layer and a first electrode of the component;
- heating the component;
- measuring an offset of a threshold voltage of the component;
- deducing therefrom a surface concentration of carbon atoms occupying nitrogen sites of the gallium nitride crystal structure in the first epitaxial carbon-doped gallium nitride layer;
- and
- adapting epitaxy parameters of the first epitaxial carbon-doped gallium nitride layer according to the estimation of the surface concentration of carbon atoms occupying nitrogen sites of the gallium nitride crystal structure.
The method according to claims claim land 6, wherein the component is a transistor, preferably a high electron mobility transistor, the first electrode being a gate electrode and the second electrode being an electrode connected to the substrate.
Dependencies are inferred from the claim text.