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US 2026/0293184 A1Published application
High electron mobility transistor, rf switch circuit, power amplifier circuit, and wireless communication terminal
AssigneeSony Semiconductor Solutions Corporation
InventorKazuki Kishida
Life of this patent
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Abstract
A high electron mobility transistor and related devices are disclosed. In one example, a high electron mobility transistor includes a semiconductor layer, a gate electrode, and a gate insulating film between the semiconductor layer and the gate electrode. The gate insulating film includes a first insulating film in contact with the semiconductor layer and a second insulating film in contact with the first insulating film and the gate electrode.
Claims15
A high electron mobility transistor comprising:
- a semiconductor layer;
- a gate electrode;
- and
- a gate insulating film provided between the semiconductor layer and the gate electrode, wherein
- the gate insulating film includes
- a first insulating film in contact with the semiconductor layer, and
- a second insulating film in contact with the first insulating film and the gate electrode, and
- the first insulating film and the second insulating film satisfy relational expressions (A), (B), and (C) below,
- EOT
-
- (
- T
-
- 1
- )
- /
- EOT
-
- (
- T
-
- 2
- )
- ≥
- 1.43
- (
- A
- )
- EOT
-
- (
- T
-
- 2
- )
- ≤
- 0.75
- nm
- (
- B
- )
- ε1
- ≥
- ε
-
- 2
- (
- C
- )
- where
- T1:
- a thickness (nm) of the first insulating film
- T2:
- a thickness (nm) of the second insulating film
- EOT(T1):
- an equivalent oxide film thickness of the first insulating film
- EOT(T2):
- an equivalent oxide film thickness of the second insulating film
- ε1:
- a relative permittivity of the first insulating film
- ε2:
- a relative permittivity of the second insulating film
- EOT:
- an equivalent oxide film thickness indicating a film thickness equivalent to a film thickness of a silicon oxide film in terms of electrostatic capacitance.
61 more elements
An RF switch circuit comprising a high electron mobility transistor, wherein
- the high electron mobility transistor includes
- a semiconductor layer,
- a gate electrode, and
- a gate insulating film provided between the semiconductor layer and the gate electrode,
- the gate insulating film includes
- a first insulating film in contact with the semiconductor layer, and
- a second insulating film in contact with the first insulating film and the gate electrode, and
- the first insulating film and the second insulating film satisfy relational expressions (A), (B), and (C) below,
- EOT
-
- (
- T
-
- 1
- )
- /
- EOT
-
- (
- T
-
- 2
- )
- ≥
- 1.43
- (
- A
- )
- EOT
-
- (
- T
-
- 2
- )
- ≤
- 0.75
- nm
- (
- B
- )
- ε1
- ≥
- ε
-
- 2
- (
- C
- )
- where
- T1:
- a thickness (nm) of the first insulating film
- T2:
- a thickness (nm) of the second insulating film
- EOT(T1):
- an equivalent oxide film thickness of the first insulating film
- EOT(T2):
- an equivalent oxide film thickness of the second insulating film
- ε1:
- a relative permittivity of the first insulating film
- ε2:
- a relative permittivity of the second insulating film
- EOT:
- an equivalent oxide film thickness indicating a film thickness equivalent to a film thickness of a silicon oxide film in terms of electrostatic capacitance.
61 more elements
A power amplifier circuit comprising a high electron mobility transistor, wherein
- the high electron mobility transistor includes
- a semiconductor layer,
- a gate electrode, and
- a gate insulating film provided between the semiconductor layer and the gate electrode,
- the gate insulating film includes
- a first insulating film in contact with the semiconductor layer, and
- a second insulating film in contact with the first insulating film and the gate electrode, and
- the first insulating film and the second insulating film satisfy relational expressions (A), (B), and (C) below,
- EOT
-
- (
- T
-
- 1
- )
- /
- EOT
-
- (
- T
-
- 2
- )
- ≥
- 1.43
- (
- A
- )
- EOT
-
- (
- T
-
- 2
- )
- ≤
- 0.75
- nm
- (
- B
- )
- ε1
- ≥
- ε
-
- 2
- (
- C
- )
- where
- T1:
- a thickness (nm) of the first insulating film
- T2:
- a thickness (nm) of the second insulating film
- EOT(T1):
- an equivalent oxide film thickness of the first insulating film
- EOT(T2):
- an equivalent oxide film thickness of the second insulating film
- ε1:
- a relative permittivity of the first insulating film
- ε2:
- a relative permittivity of the second insulating film
- EOT:
- an equivalent oxide film thickness indicating a film thickness equivalent to a film thickness of a silicon oxide film in terms of electrostatic capacitance.
61 more elements
A wireless communication terminal comprising a high electron mobility transistor, wherein
- the high electron mobility transistor includes
- a semiconductor layer,
- a gate electrode, and
- a gate insulating film provided between the semiconductor layer and the gate electrode,
- the gate insulating film includes
- a first insulating film in contact with the semiconductor layer, and
- a second insulating film in contact with the first insulating film and the gate electrode, and
- the first insulating film and the second insulating film satisfy relational expressions (A), (B), and (C) below,
- EOT
-
- (
- T
-
- 1
- )
- /
- EOT
-
- (
- T
-
- 2
- )
- ≥
- 1.43
- (
- A
- )
- EOT
-
- (
- T
-
- 2
- )
- ≤
- 0.75
- nm
- (
- B
- )
- ε1
- ≥
- ε
-
- 2
- (
- C
- )
- where
- T1:
- a thickness (nm) of the first insulating film
- T2:
- a thickness (nm) of the second insulating film
- EOT(T1):
- an equivalent oxide film thickness of the first insulating film
- EOT(T2):
- an equivalent oxide film thickness of the second insulating film
- ε1:
- a relative permittivity of the first insulating film
- ε2:
- a relative permittivity of the second insulating film
- EOT:
- an equivalent oxide film thickness indicating a film thickness equivalent to a film thickness of a silicon oxide film in terms of electrostatic capacitance.
61 more elements
Dependencies are inferred from the claim text.