Semiconductor device and manufacturing method for semiconductor device

A semiconductor device comprising:

• a semiconductor layer;
• a first insulating film provided on the semiconductor layer;
• a first electrode provided on the first insulating film;
• a second electrode provided on the semiconductor layer;
• a third electrode provided on the semiconductor layer;
• and
• a nitride film provided on the semiconductor layer on the second electrode side between the first electrode and the second electrode, wherein
• the nitride film and the first insulating film are arranged in a stacking direction of the semiconductor layer and the first electrode,
• the nitride film includes a portion which is in direct contact with the semiconductor layer,
• the nitride film on the first electrode side has a riding-up portion that rides up onto the first insulating film on the third electrode side in the stacking direction, and
• a length of the riding-up portion in a direction where the first electrode and the third electrode are aligned is more than 0% and 5% or less of a distance between an end surface on the third electrode side of the first electrode and an end surface on the first electrode side of the third electrode.

A manufacturing method for a semiconductor device comprises:

• forming a first insulating film on a semiconductor layer;
• forming a second insulating film on the first insulating film;
• forming a first opening in the first insulating film and the second insulating film;
• forming a nitride film on the semiconductor layer exposed by the first opening and on the second insulating film;
• annealing the nitride film;
• patterning the annealed nitride film to remove a part of the nitride film on the second insulating film;
• removing at least a portion of the second insulating film to expose a part of the first insulating film;
• forming a first electrode on the first insulating film;
• forming a second opening in the first insulating film and a third opening in the nitride film;
• and
• forming a second electrode in the second opening and a third electrode in the third opening.