Enhancement mode high electron mobility transistor

An enhancement mode high electron mobility transistor, comprising:

• a) a substrate layer;
• b) a buffer layer;
• c) barrier layers, each barrier layer comprising an upper surface;
• d) drain electrodes;
• e) reverse polarization semiconductor layers, each reverse polarization semiconductor layer comprising an upper surface;
• f) source electrodes, each source electrode comprising an upper surface;
• g) an insulated gate dielectric;
• and
• h) a metal gate electrode;
• wherein
• the buffer layer is disposed on the substrate layer, and the barrier layers are disposed on the buffer layer;
• interfaces between the buffer layer and the barrier layers are provided with first heterojunctions comprising a two-dimensional electron gas channel;
• the drain electrodes are disposed at one end of the upper surfaces of the barrier layers and form Ohmic contact with the barrier layers;
• the reverse polarization semiconductor layers are disposed on the upper surfaces of the barrier layers and are able to produce inversed polarization with the barrier layers;
• interfaces between reverse polarization semiconductor layers and barrier layers are provided with second heterojunctions comprising two-dimensional hole gas;
• the source electrodes are disposed at one end of the upper surfaces of the reverse polarization semiconductor layers away from the drain electrodes;
• connecting interfaces between the source electrodes and the reverse polarization semiconductor layers are provided with potential wells;
• between the drain electrodes and the reverse polarization semiconductor layers are provided with hole blocking regions;
• a groove comprising a bottom and side walls is disposed at one side of the source electrodes away from the drain electrodes;
• the bottom of the groove is disposed in the buffer layer;
• the insulated gate dielectric is disposed in the bottom and the side wall of the groove and extends from the upper surfaces of the source electrodes to the drain electrodes;
• the insulated gate dielectric is covered by the metal gate electrode, and the insulated gate dielectric and the metal gate electrode are combined to form an insulating gate structure.