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US 9,129,888 B2Granted
Nitride-based semiconductor device and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJae Hoon Lee, Young Sun Kwak
Life of this patent
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Abstract
A nitride-based semiconductor device includes a buffer layer on a substrate, a nitride-based semiconductor layer on the buffer layer, at least one ion implanted layer within the nitride-based semiconductor layer, and a channel layer on the nitride-based semiconductor layer.
Claims19
A nitride-based semiconductor device, comprising:
- a buffer layer disposed on a substrate;
- a nitride-based semiconductor layer disposed on the buffer layer;
- the nitride-based semiconductor layer including a plurality of ion implanted layers, each including at least one impurity ion, each of the plurality of ion implanted layers being vertically spaced apart from one another in the nitride-based semiconductor layer;
- a channel layer disposed on the nitride-based semiconductor layer;
- a gate electrode, a source electrode, and a drain electrode respectively disposed on the channel layer;
- an undoped layer over the channel layer;
- and
- a functional layer over the undoped layer, wherein:
- each of the plurality of ion implanted layers overlaps the gate electrode, the source electrode, and the drain electrode,
- the nitride-based semiconductor layer includes at least one interlayer portion interposed between the plurality of ion implanted layers, the at least one interlayer portion being formed of a same material as another portion of the nitride-based semiconductor layer,
- the gate extends through the undoped layer and the functional layer, and
- the gate extends through the channel layer to a level of the nitride-based semiconductor layer.
9 more elements
A method of manufacturing a nitride-based semiconductor device, the method comprising:
- forming a buffer layer on a substrate;
- forming a nitride-based semiconductor layer on the buffer layer;
- forming a plurality of ion implanted layers in the nitride-based semiconductor layer, each of the plurality of ion implanted layers including at least one impurity ion and being vertically spaced apart from one another in the nitride-based semiconductor layer;
- forming a channel layer on the nitride-based semiconductor layer;
- forming an undoped layer over the channel layer;
- and
- forming a functional layer over the undoped layer, wherein:
- a gate electrode, a source electrode, and a drain electrode are respectively disposed on the channel layer,
- each of the plurality of ion implanted layers overlaps the gate electrode, the source electrode, and the drain electrode,
- the nitride-based semiconductor layer includes at least one interlayer portion interposed between the plurality of ion implanted layers, the at least one interlayer portion being formed of a same material as another portion of the nitride-based semiconductor layer,
- the gate extends through the undoped layer and the functional layer, and
- the gate extends through the channel layer to a level of the nitride-based semiconductor layer.
9 more elements
Dependencies are inferred from the claim text.