High breakdown voltage hemt device and driving method thereof

A high electron mobility transistor (HEMT) device, comprising:

• a multilayer body material layer;
• a source electrode and a drain electrode, wherein the source electrode and the drain electrode are both stacked with the multilayer body material layer;
• along a first direction, the source electrode and the drain electrode are respectively located on two opposite sides of the multilayer body material layer;
• or, along the first direction, the source electrode and the drain electrode are located on a same side of the multilayer body material layer, and the source electrode and the drain electrode are respectively located on different mesas;
• a first gate electrode, wherein the first gate electrode is located on the same side of the multilayer body material layer as the source electrode and is stacked with the multilayer body material layer;
• and the first gate electrode is disposed adjacent to the source electrode;
• and
• a second gate electrode, wherein the second gate electrode is located on the same side of the multilayer body material layer as the first gate electrode, the second gate electrode is disposed adjacent to the first gate electrode, and the first gate electrode is located between the second gate electrode and the source electrode;
• the second gate electrode extends from a surface of the multilayer body material layer into an interior of the multilayer body material layer and extends along the first direction, and the second gate electrode is configured to control a vertical conductive channel along the first direction;
• and the first direction is perpendicular to the multilayer body material layer.