Semiconductor device

A semiconductor device comprising:

• a first electrode,
• a second electrode, a direction from the first electrode toward the second electrode being aligned with a first direction,
• a third electrode including a first electrode portion, a third electrode position in the first direction of the first electrode portion being between a first electrode position in the first direction of the first electrode and a second electrode position in the first direction of the second electrode,
• a semiconductor member,
• a first insulating member, wherein the semiconductor member includes
• a first semiconductor region including Alx1Ga1-x1N (0≤x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a direction from the first partial region toward the first electrode being along a second direction intersecting the first direction, a direction from the second partial region toward the second electrode being along the second direction, a direction from the third partial region toward the first electrode portion being along the second direction, a fourth partial region position of the fourth partial region in the first direction being between a first partial region position of the first partial region in the first direction and a third partial region position of the third partial region in the first direction, and a fifth partial region position of the fifth partial region in the first direction being between the third partial region position and a second partial region position of the second partial region in the first direction,
• a second semiconductor region including Alx2Ga1-x2N (0≤x2<1), the second semiconductor region including a first semiconductor portion and a second semiconductor portion, a direction from the fourth partial region toward the first semiconductor portion being aligned with the second direction, a direction from the fifth partial region toward the second semiconductor portion being aligned with the second direction, a <0001> orientation of the second semiconductor region being opposite to a <0001> orientation of the first semiconductor region,
• a third semiconductor region including Alx3Ga1-x3N (0<x3≤1, x1<x3, x2<x3), the third semiconductor region including a first region, a second region, a third region, a fourth region, and a fifth region, the first semiconductor portion being between the fourth partial region and the first region in the second direction, the second semiconductor portion being between the fifth partial region and the second region in the second direction, the third region being between the third partial region and the first electrode portion in the second direction, the fourth region being between the first semiconductor portion and the first electrode portion in the first direction, the fifth region being between the first electrode portion and the second semiconductor portion in the first direction, and
• at least a portion of the first insulating member being between the semiconductor member and the third electrode.