H10D 30/0229
Forming drain regions and lightly-doped drain [ldd] simultaneously
Official title: {forming drain regions and lightly-doped drain [LDD] simultaneously, e.g. using implantation through a T-shaped mask}
H10D30/0229 (Forming drain regions and lightly-doped drain [ldd] simultaneously) appears on 195 US grants and 138 published applications in this corpus.
Search patents in H10D- Granted patents
- 195
- Published applications
- 138
- Assignees
- 78
- Inventors
- 321
- Latest grant
- 17 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 4 | 0 |
| 1989 | 2 | 0 |
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| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 2 | 0 |
| 1998 | 5 | 0 |
| 1999 | 10 | 0 |
| 2000 | 21 | 0 |
| 2001 | 8 | 2 |
| 2002 | 7 | 9 |
| 2003 | 4 | 6 |
| 2004 | 9 | 8 |
| 2005 | 9 | 10 |
| 2006 | 5 | 8 |
| 2007 | 7 | 7 |
| 2008 | 6 | 4 |
| 2009 | 7 | 1 |
| 2010 | 6 | 3 |
| 2011 | 2 | 2 |
| 2012 | 3 | 3 |
| 2013 | 0 | 4 |
| 2014 | 4 | 8 |
| 2015 | 7 | 9 |
| 2016 | 4 | 8 |
| 2017 | 7 | 8 |
| 2018 | 8 | 2 |
| 2019 | 7 | 12 |
| 2020 | 8 | 4 |
| 2021 | 2 | 5 |
| 2022 | 4 | 4 |
| 2023 | 3 | 3 |
| 2024 | 4 | 2 |
| 2025 | 1 | 3 |
| 2026 | 1 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method of manufacturing a semiconductor device and a semiconductor device17 Dec 2024US 12,170,325 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor structure and manufacturing method thereof2 Jul 2024US 12,027,584 B2Macronix International Co., Ltd.
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- Semiconductor device and method for fabricating the same1 May 2025US 2025/0142854 A1United Microelectronics Corp.
- Radio Frequency (RF) Semiconductor-On-Insulator (SOI) Device with Improved Power Handling24 Apr 2025US 2025/0133766 A1Newport Fab, LLC dba Tower Semiconductor Newport Beach
Most cited
By later US patents
- Semiconductor device having LDD regions232US 6,909,114 B1Semiconductor Energy Laboratory Co.Ltd. · 2005
- Low-K sub spacer pocket formation for gate capacitance reduction231US 6,351,013 B1Advanced Micro Devices, Inc. · 2002
- Method for forming a MOS transistor and structure thereof204US 5,292,675 ASemiconductor Energy Laboratory Co.Ltd. · 1994
- Method of fabricating a LDDFET with self-aligned silicide151US 4,818,715 AIndustrial Technology Research Institute · 1989
- Semiconductor device and method for manufacturing the same128US 6,049,092 ASemiconductor Energy Laboratory Co.Ltd. · 2000