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US 2026/0082613 A1Published application
Semiconductor device with dipole portion and method for preparing the same
AssigneeNanya Technology Corporation
InventorYU-HUA LIU
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Abstract
A semiconductor device includes a gate structure disposed over a semiconductor substrate, and a dielectric layer surrounding the gate structure. The semiconductor device also includes a source region and a drain region disposed in the semiconductor substrate and on opposite sides of the gate structure. The semiconductor device further includes a first dipole portion disposed over the semiconductor substrate and covering the source region, and a first dielectric spacer disposed over the first dipole portion and adjacent to the dielectric layer.
Claims14
A semiconductor device, comprising:
- a gate structure disposed over a semiconductor substrate;
- a dielectric layer surrounding the gate structure;
- a source region and a drain region disposed in the semiconductor substrate and on opposite sides of the gate structure;
- a first dipole portion disposed over the semiconductor substrate and covering the source region;
- and
- a first dielectric spacer disposed over the first dipole portion and adjacent to the dielectric layer.
3 more elements
Dependencies are inferred from the claim text.