Radio Frequency (RF) Semiconductor-On-Insulator (SOI) Device with Improved Power Handling

A method of forming a radio frequency (RF) switch comprising:

• providing a semiconductor-on-insulator (SOI) substrate including a handle wafer, a buried oxide over said handle wafer, and a thin semiconductor layer over said buried oxide;
• forming a gate of a transistor over said thin semiconductor layer;
• forming a source and a drain of said transistor in said thin semiconductor layer;
• said thin semiconductor layer having a thickness less than approximately four hundred angstroms (400 Å), so as to increased maximum power handling (PMAX) of said transistor;
• said forming said source and said drain of said transistor comprising implanting ions in said thin semiconductor layer without amorphizing said thin semiconductor layer.

A radio frequency (RF) device comprising:

• at least one RF switch coupled between an RF input and an RF output said at least one RF switch comprising:
• a semiconductor-on-insulator (SOI) substrate including a handle wafer, a thick buried oxide over said handle wafer, and a thin semiconductor layer over said buried oxide;
• a transistor in said thin semiconductor layer, said transistor including a gate, a source, a drain;
• said thin semiconductor layer having a thickness less than approximately four hundred angstroms (400 Å), so as to increased maximum power handling (PMAX) of said transistor;
• said thick buried oxide having another thickness of approximately two thousand angstroms (2,000 Å) to approximately six thousand angstroms (6,000 Å).