Having both lightly-doped source and drain extensions and source and drain regions

Official title: {having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET}

H10D30/0227 (Having both lightly-doped source and drain extensions and source and drain regions) appears on 5,025 US grants and 4,478 published applications in this corpus.