Semiconductor device and method for manufacturing the same

A thin film transistor comprising:

• an insulating surface;
• a channel semiconductor layer provided on said insulating surface and comprising a channel forming region;
• a first region containing an impurity of one conductivity type provided adjacent to said channel forming region;
• a source and a drain at least one of which is provided outside said first region;
• a silicide provided on said source and said drain;
• and
• a gate electrode provided over said channel semiconductor layer with a gate insulating film interposed therebetween,
• wherein sheet resistance of said source and said drain is 10-50.OMEGA./square, and sheet resistance of said first region is 10-100 k.OMEGA./square, and
• wherein said silicide does not exist on said first region.

A thin film transistor comprising:

• an insulating surface;
• a channel semiconductor layer provided on said insulating surface and comprising a channel forming region;
• a first region containing an impurity of one conductivity type provided adjacent to said channel forming region;
• a source and a drain at least one of which is provided outside said first region;
• a silicide provided on said source and said drain;
• a gate electrode provided over said channel semiconductor layer with a gate insulating film interposed therebetween;
• and
• an oxide of a material of said gate electrode provided outside of said gate electrode,
• wherein an impurity is contained in said source and said drain at a concentration higher than that of said impurity of one conductivity type in said first region,
• wherein said gate insulating film extends outside said gate electrode,
• wherein said first region is provided under said gate insulating film, and
• wherein said silicide does not exist on said first region.

A thin film transistor comprising:

• an insulating surface;
• a channel semiconductor layer provided on said insulating surface and comprising a channel forming region;
• a first region containing an impurity of one conductivity type provided adjacent to said channel forming region;
• a source and a drain at least one of which is provided outside said first region, said source and said drain comprising silicide;
• a silicide provided on said source and said drain;
• and
• a gate electrode provided over said channel semiconductor layer with a gate insulating film interposed therebetween,
• wherein an impurity is contained in said source and said drain at a concentration higher than that of said impurity of one conductivity type in said first region, and
• wherein said silicide does not exist on said first region.

A thin film transistor comprising:

• an insulating surface;
• a channel semiconductor layer provided on said insulating surface and comprising a channel forming region;
• a first region containing an impurity of one conductivity type provided adjacent to said channel forming region;
• a source and a drain at least one of which is provided outside said first region;
• a silicide provided on said source and said drain;
• and
• a gate electrode provided over said channel semiconductor layer with a gate insulating film interposed therebetween,
• wherein an impurity is contained in said source and said drain at a concentration 1.times.10.sup.20 to 2.times.10.sup.21 cm.sup.-3, and said impurity of one conductivity type is contained in said first region at a concentration of 1.times.10.sup.17 to 2.times.10.sup.18 cm.sup.-3, and
• wherein said silicide does not exist on said first region.