H10D 18/00
Thyristors
H10D18/00 (Thyristors) appears on 1,932 US grants and 1,283 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,932
- Published applications
- 1,283
- Assignees
- 436
- Inventors
- 2,160
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 20 | 0 |
| 1977 | 22 | 0 |
| 1978 | 18 | 0 |
| 1979 | 15 | 0 |
| 1980 | 21 | 0 |
| 1981 | 21 | 0 |
| 1982 | 12 | 0 |
| 1983 | 15 | 0 |
| 1984 | 17 | 0 |
| 1985 | 24 | 0 |
| 1986 | 31 | 0 |
| 1987 | 24 | 0 |
| 1988 | 22 | 0 |
| 1989 | 26 | 0 |
| 1990 | 39 | 0 |
| 1991 | 31 | 0 |
| 1992 | 29 | 0 |
| 1993 | 18 | 0 |
| 1994 | 39 | 0 |
| 1995 | 41 | 0 |
| 1996 | 31 | 0 |
| 1997 | 35 | 0 |
| 1998 | 39 | 0 |
| 1999 | 32 | 0 |
| 2000 | 25 | 0 |
| 2001 | 24 | 13 |
| 2002 | 36 | 28 |
| 2003 | 36 | 36 |
| 2004 | 51 | 35 |
| 2005 | 49 | 43 |
| 2006 | 40 | 49 |
| 2007 | 39 | 41 |
| 2008 | 40 | 41 |
| 2009 | 38 | 34 |
| 2010 | 41 | 40 |
| 2011 | 37 | 30 |
| 2012 | 49 | 63 |
| 2013 | 57 | 61 |
| 2014 | 59 | 71 |
| 2015 | 76 | 92 |
| 2016 | 99 | 86 |
| 2017 | 82 | 84 |
| 2018 | 67 | 69 |
| 2019 | 78 | 65 |
| 2020 | 57 | 65 |
| 2021 | 52 | 50 |
| 2022 | 45 | 53 |
| 2023 | 37 | 34 |
| 2024 | 43 | 55 |
| 2025 | 32 | 33 |
| 2026 | 21 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 18/60Gate-turn-off devices619
- H10D 18/251Lateral thyristors529
- H10D 18/01Manufacture or treatment338
- H10D 18/40Thyristors: with turn-on by field effect314
- H10D 18/80Bidirectional devices267
- H10D 18/221Thyristors: having amplifying gate structures106
- H10D 18/211Thyristors: having built-in localised breakdown or breakover regions70
- H10D 18/241Asymmetrical thyristors34
Recent patents
- High noise immunity TRIAC structure6 Oct 2026US 12,757,421 B2Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Semiconductor device having multiple electrostatic discharge (ESD) paths22 Sep 2026US 12,745,465 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Gate-commuted thyristor cell with a base region having a varying thickness8 Sep 2026US 12,733,225 B2Hitachi Energy Ltd
- Method of manufacturing silicon carbide substrate, silicon carbide single-crystal substrate and silicon carbide semiconductor device25 Aug 2026US 12,720,830 B2Denso Corporation
- Method for discharging static electricity11 Aug 2026US 12,707,725 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for discharging static electricity8 Oct 2026US 2026/0314080 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device10 Sep 2026US 2026/0271319 A1Samsung Electronics Co., Ltd.
- Semiconductor device10 Sep 2026US 2026/0271320 A1Samsung Electronics Co., Ltd.
- Semiconductor device including memory cell including thyristor and method of manufacturing the same13 Aug 2026US 2026/0239632 A1SK hynix Inc.
- Substrate-less diode, bipolar and feedthrough integrated circuit structures2 Jul 2026US 2026/0190502 A1Intel Corporation
Most cited
By later US patents
- Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches538US 6,229,161 B1Stanford University · 2001
- Advanced methods for making semiconductor devices by low temperature direct bonding449US 6,153,495 AIntersil Corporation · 2000
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012
- Method of maintaining the state of semiconductor memory having electrically floating body transistor337US 8,514,623 B2Zeno Semiconductor, Inc. · 2013
- Thyristor-based memory and its method of operation283US 7,078,739 B1T-RAM Semiconductor, Inc. · 2006