H10D 18/251
Lateral thyristors
Official title: {Lateral thyristors}
H10D18/251 (Lateral thyristors) appears on 529 US grants and 413 published applications in this corpus.
Search patents in H10D- Granted patents
- 529
- Published applications
- 413
- Assignees
- 187
- Inventors
- 677
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 0 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 5 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 7 | 0 |
| 1996 | 6 | 0 |
| 1997 | 8 | 0 |
| 1998 | 6 | 0 |
| 1999 | 6 | 0 |
| 2000 | 9 | 0 |
| 2001 | 3 | 2 |
| 2002 | 10 | 10 |
| 2003 | 11 | 8 |
| 2004 | 18 | 8 |
| 2005 | 14 | 17 |
| 2006 | 19 | 14 |
| 2007 | 19 | 15 |
| 2008 | 19 | 26 |
| 2009 | 23 | 16 |
| 2010 | 20 | 27 |
| 2011 | 22 | 16 |
| 2012 | 28 | 22 |
| 2013 | 24 | 23 |
| 2014 | 31 | 26 |
| 2015 | 32 | 29 |
| 2016 | 20 | 14 |
| 2017 | 28 | 23 |
| 2018 | 21 | 19 |
| 2019 | 14 | 12 |
| 2020 | 11 | 14 |
| 2021 | 11 | 12 |
| 2022 | 14 | 15 |
| 2023 | 10 | 11 |
| 2024 | 12 | 19 |
| 2025 | 11 | 9 |
| 2026 | 10 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for discharging static electricity11 Aug 2026US 12,707,725 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-layer random access memory and methods of manufacture14 Jul 2026US 12,684,757 B2TC Lab, Inc.
- Device for electrostatic discharge protection using silicon controlled rectifier16 Jun 2026US 12,658,695 B2Samsung Electronics Co., Ltd.
- Gated protection device structures for an electrostatic discharge protection circuit16 Jun 2026US 12,660,221 B2GLOBALFOUNDRIES U. S. Inc.
- Device for electrostatic discharge protection using silicon controlled rectifier2 Jun 2026US 12,648,232 B2Samsung Electronics Co., Ltd.
- Method for discharging static electricity8 Oct 2026US 2026/0314080 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including memory cell including thyristor and method of manufacturing the same13 Aug 2026US 2026/0239632 A1SK hynix Inc.
- Substrate-less diode, bipolar and feedthrough integrated circuit structures2 Jul 2026US 2026/0190502 A1Intel Corporation
- Silicon controlled rectifier (scr), integrated circuit (ic) chip including scr, and methods of forming scr18 Jun 2026US 2026/0173540 A1GLOBALFOUNDRIES U. S. Inc.
- Integrated circuit protection device and method14 May 2026US 2026/0136679 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Thyristor-based memory and its method of operation283US 7,078,739 B1T-RAM Semiconductor, Inc. · 2006
- Stability in thyristor-based memory device166US 6,653,175 B1T-Ram, Inc. · 2003
- T-Ram array having a planar cell structure and method for fabricating the same141US 6,552,398 B2IBM Corporation · 2003
- Integrated SCR-LDMOS power device106US 6,137,140 ATexas Instruments Incorporated · 2000
- Stability in thyristor-based memory device92US 6,462,359 B1T-Ram, Inc. · 2002