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US 12,658,695 B2Granted
Device for electrostatic discharge protection using silicon controlled rectifier
AssigneeSamsung Electronics Co., Ltd.
InventorsKyoungil Do, Jinwoo Jung, Jooyoung Song, Mijin Lee, Chanhee Jeon
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Abstract
A device including a first clamp circuit connected between a first node and a second node, wherein the first clamp circuit includes: a symmetric bipolar transistor comprising a control terminal, a first current terminal and a second current terminal, wherein the first current terminal and the second current terminal are symmetrical to each other with respect to the control terminal; a first bipolar transistor electrically connected to the symmetric bipolar transistor and to the first node; and a second bipolar transistor electrically connected to the symmetric bipolar transistor and to the second node.
Claims10
A device comprising a first clamp circuit connected between a first node and a second node,
- wherein the first clamp circuit comprises:
- a symmetric bipolar transistor comprising a control terminal, a first current terminal and a second current terminal, wherein the first current terminal and the second current terminal are symmetrical to each other with respect to the control terminal;
- a first bipolar transistor electrically connected to the symmetric bipolar transistor and to the first node;
- a second bipolar transistor electrically connected to the symmetric bipolar transistor and to the second node;
- at least one first diode forwardly connected from the control terminal to at least one of the first node and the first current terminal;
- and
- at least one second diode forwardly connected from the control terminal to at least one of the second node and the second current terminal.
4 more elements
A device comprising a first clamp circuit connected between a first node and a second node,
- wherein the first clamp circuit comprises:
- a symmetric bipolar transistor comprising a control terminal, a first current terminal and a second current terminal, wherein the first current terminal and the second current terminal are symmetrical to each other with respect to the control terminal;
- a first bipolar transistor electrically connected to the symmetric bipolar transistor and to the first node;
- and
- a second bipolar transistor electrically connected to the symmetric bipolar transistor and to the second node,
- wherein the first current terminal corresponds to a first n-well, the control terminal corresponds to a p-well, and the second current terminal corresponds to a second n-well,
- wherein the first n-well, the p-well, and the second n-well are sequentially disposed, and
- wherein each of the first bipolar transistor and the second bipolar transistor is a PNP bipolar transistor,
- wherein the first clamp circuit further comprises:
- at least one first diode forwardly connected from the first current terminal to the second node;
- and
- at least one second diode forwardly connected from the second current terminal to the first node,
- wherein the at least one first diode comprises a first-first diode,
- wherein a cathode of the first-first diode corresponds to a third n-well disposed apart from the first n-well, and an anode of the first-first diode corresponds to a p+ region disposed in the third n-well,
- wherein the at least one second diode comprises a first-second diode, wherein a cathode of the first-second diode corresponds to a fourth n-well disposed apart from the second n-well, and an anode of the first-second diode corresponds to a p+ region disposed in the fourth n-well,
- wherein the at least one first diode further comprises a second-first diode, wherein a cathode of the second-first diode corresponds to the first n-well, and an anode of the second-first diode corresponds to a p+ region disposed in the first n-well, and
- wherein the at least one second diode further comprises a second-second diode, wherein a cathode of the second-second diode corresponds to the second n-well, and an anode of the second-second diode corresponds to a p+ region disposed in the second n-well.
14 more elements
A device comprising a first clamp circuit connected between a first node and a second node,
- wherein the first clamp circuit comprises:
- a symmetric NPN bipolar transistor comprising a control terminal, a first current terminal and a second current terminal, wherein the first current terminal and the second current terminal are symmetrical to each other with respect to the control terminal;
- a first PNP bipolar transistor comprising a first collector electrically connected to the control terminal, a first base electrically connected to the first current terminal, and a first emitter electrically connected to the first node;
- a second PNP bipolar transistor comprising a second collector electrically connected to the control terminal, a second base electrically connected to the second current terminal, and a second emitter electrically connected to the second node;
- at least one first diode forwardly connected from at least one of the first node and the first current terminal to the control terminal;
- and
- at least one second diode forwardly connected from at least one of the second node and the second current terminal to the control terminal.
4 more elements
Dependencies are inferred from the claim text.