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US 2026/0173540 A1Published application
Silicon controlled rectifier (scr), integrated circuit (ic) chip including scr, and methods of forming scr
AssigneeGlobalFoundries U.S. Inc.
InventorsAnupam DUTTA, Vvss Satyasuresh CHOPPALLI, Rajendran KRISHNASAMY, Judson Robert HOLT
Life of this patent
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Abstract
A silicon controlled rectifier (SCR) includes a first well, a second well, a first well contact formed in the first well, a second well contact formed in the second well, a first junction contact raised compared to the first well contact, and a second junction contact raised compared to the second well contact.
Claims20
A silicon controlled rectifier (SCR), comprising:
- a first well;
- a second well;
- a first well contact formed in the first well;
- a second well contact formed in the second well;
- a first junction contact raised compared to the first well contact;
- and
- a second junction contact raised compared to the second well contact.
4 more elements
An integrated circuit (IC), comprising:
- a protected device;
- and
- a silicon controlled rectifier (SCR) coupled between an I/O pad and the protective device,
- wherein the SCR comprises:
- a first well;
- a second well;
- a first well contact formed in the first well;
- a second well contact formed in the second well;
- a first junction contact raised compared to the first well contact;
- and
- a second junction contact raised compared to the second well contact.
8 more elements
A method of forming a silicon controlled rectifier (SCR), comprising:
- forming a first well contact in a first well;
- forming a second well contact in a second well;
- forming a first junction contact raised compared to the first well contact;
- and
- forming a second junction contact raised compared to the second well contact.
2 more elements
Dependencies are inferred from the claim text.