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US 12,648,232 B2Granted
Device for electrostatic discharge protection using silicon controlled rectifier
AssigneeSamsung Electronics Co., Ltd.
InventorsKyoungil Do, Jinwoo Jung, Jooyoung Song, Mijin Lee, Chanhee Jeon
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Abstract
A device, including a first silicon controlled rectifier comprising a first anode connected to a first node, a first cathode connected to a pad, and a first gate; a second silicon controlled rectifier comprising a second anode connected to the pad, a second cathode connected to a second node, and a second gate; and a back diode forwardly connected from the second node to the first gate.
Claims20
A device comprising:
- a first silicon controlled rectifier comprising a first anode connected to a first node, a first cathode connected to a pad, and a first gate;
- a second silicon controlled rectifier comprising a second anode connected to the pad, a second cathode connected to a second node, and a second gate;
- and
- a back diode forwardly connected from the second node to the first gate,
- wherein the back diode is directly connected to the first gate.
2 more elements
A device comprising:
- a first silicon controlled rectifier comprising a first p-well and a first n-well consecutively disposed in a substrate, a first n+ region disposed in the first p-well, and a first p+ region disposed in the first n-well, wherein the first p+ region is electrically connected to a first node;
- a second silicon controlled rectifier comprising a second n-well and a second p-well consecutively disposed in the substrate, a second p+ region disposed in the second n-well, and a second n+ region disposed in the second p-well, wherein the second n+ region is electrically connected to a second node;
- and
- a back diode comprising a third n+ region disposed in the substrate between the first silicon controlled rectifier and the second silicon controlled rectifier, wherein the third n+ region is electrically connected to the first p-well,
- wherein the first n+ region and the second p+ region are electrically connected to a pad.
2 more elements
A device comprising:
- a first PNP bipolar transistor and a first NPN bipolar transistor, wherein a base of the first NPN bipolar transistor is connected to a collector of the first PNP bipolar transistor, and wherein a collector of the first NPN bipolar transistor is connected to a base of the first PNP bipolar transistor;
- and
- a second PNP bipolar transistor and a second NPN bipolar transistor, wherein a base of the second NPN bipolar transistor is connected to a collector of the second PNP bipolar transistor, and wherein a collector of the second NPN bipolar transistor is connected to a base of the second PNP bipolar transistor,
- wherein an emitter of the first PNP bipolar transistor is connected to a first node,
- wherein an emitter of the first NPN bipolar transistor and an emitter of the second PNP bipolar transistor are connected to a pad,
- wherein an emitter of the second NPN bipolar transistor is connected to a second node, and
- wherein the device further comprises a back diode forwardly connected from the second node to the base of the first NPN bipolar transistor,
- wherein the back diode is directly connected to the base of the first NPN bipolar transistor.
5 more elements
Dependencies are inferred from the claim text.