Integrated circuit protection device and method

An integrated circuit (IC) device comprising:

• a first transistor structure in a first doped region of a substrate, the first transistor structure comprising a common gate terminal, a first body contact having a first conductivity type, a first source contact having a second conductivity type, a second body contact having the second conductivity type, and a second source contact having the first conductivity type;
• a second transistor structure positioned in a second doped region of the substrate, the second transistor structure comprising a common drain terminal;
• a first electrical connection from the common drain terminal to the common gate terminal;
• a first clamp device comprising a first low resistance (low-r) element;
• wherein a length of the first electrical connection is greater than a length of a first current path, the first current path comprising:
• a second electrical connection from each of the first body contact and the first source contact to a first terminal of the first low-r element;
• the first low-r element;
• and
• a third electrical connection from a second terminal of the first low-r element to each of the second body contact and the second source contact.

A method of manufacturing an integrated circuit (IC) device, the method comprising:

• constructing a first transistor structure in a doped region of a substrate, the constructing the first transistor structure comprising forming a first body region having a first conductivity type, a first source region having a second conductivity type, a second body region having the second conductivity type, and a second source region having the first conductivity type;
• constructing a second transistor structure in a second doped region of the substrate;
• constructing a first clamp device in a third doped region of the substrate, the constructing the first clamp device comprising forming a first low resistance (low-r) element comprising a first terminal and a second terminal;
• and
• forming a first plurality of metal segments overlying the substrate from a surface of the substrate through a second metal layer of the IC device, wherein the forming the first plurality of metal segments comprises:
• forming a first electrical connection from the first terminal to each of the first body contact region and the first source region;
• and
• forming a second electrical connection from the second terminal to each of the second body contact region and the second source region.