H10D 18/80
Bidirectional devices
Official title: Bidirectional devices, e.g. triacs
H10D18/80 (Bidirectional devices) appears on 267 US grants and 208 published applications in this corpus.
Search patents in H10D- Granted patents
- 267
- Published applications
- 208
- Assignees
- 109
- Inventors
- 394
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 2 | 0 |
| 1978 | 5 | 0 |
| 1979 | 2 | 0 |
| 1980 | 4 | 0 |
| 1981 | 7 | 0 |
| 1982 | 0 | 0 |
| 1983 | 6 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 4 | 0 |
| 1989 | 2 | 0 |
| 1990 | 6 | 0 |
| 1991 | 5 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 5 | 0 |
| 2000 | 3 | 0 |
| 2001 | 3 | 1 |
| 2002 | 4 | 2 |
| 2003 | 6 | 8 |
| 2004 | 4 | 4 |
| 2005 | 7 | 3 |
| 2006 | 3 | 6 |
| 2007 | 2 | 2 |
| 2008 | 1 | 1 |
| 2009 | 2 | 6 |
| 2010 | 2 | 3 |
| 2011 | 3 | 4 |
| 2012 | 6 | 14 |
| 2013 | 6 | 11 |
| 2014 | 16 | 11 |
| 2015 | 6 | 14 |
| 2016 | 21 | 25 |
| 2017 | 20 | 14 |
| 2018 | 12 | 13 |
| 2019 | 15 | 11 |
| 2020 | 6 | 11 |
| 2021 | 7 | 9 |
| 2022 | 7 | 10 |
| 2023 | 7 | 7 |
| 2024 | 11 | 14 |
| 2025 | 5 | 4 |
| 2026 | 5 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- High noise immunity TRIAC structure6 Oct 2026US 12,757,421 B2Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Semiconductor device having multiple electrostatic discharge (ESD) paths22 Sep 2026US 12,745,465 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Gate-commuted thyristor cell with a base region having a varying thickness8 Sep 2026US 12,733,225 B2Hitachi Energy Ltd
- Semiconductor triode10 Mar 2026US 12,575,164 B2STMicroelectronics (Tours) SAS
- Bidirectional thyristor13 Jan 2026US 12,527,017 B2Shindengen Electric Manufacturing Co., Ltd.
- Electronic component28 Aug 2025US 2025/0275162 A1STMicroelectronics International N. V.
- Semiconductor triode22 May 2025US 2025/0169151 A1STMicroelectronics (Tours) SAS
- Circuit Device24 Apr 2025US 2025/0132559 A1Seiko Epson Corporation
- Silicon controlled rectifiers17 Apr 2025US 2025/0126817 A1GLOBALFOUNDRIES U. S. Inc.
- Triac gate design for commutation sensitivity trade off improvement5 Dec 2024US 2024/0405111 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Monolithic semiconductor switching device103US 4,199,774 AThe Board of Trustees of the Leland Stanford Junior University · 1980
- SCR cell for electrical overstress protection of electronic circuits82US 6,236,087 B1Analog Devices, Inc. · 2001
- Composite metal and polysilicon field plate structure for high voltage semiconductor devices78US 4,399,449 AInternational Rectifier Corporation · 1983
- PNPN Semiconductor switches77US 4,244,000 ANippon Telegraph & Telephone Public Corporation · 1981
- Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region59US 4,414,560 AInternational Rectifier Corporation · 1983