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US 12,575,164 B2Granted
Semiconductor triode
AssigneeSTMicroelectronics (Tours) SAS
InventorSamuel Menard
Life of this patent
Estimating the term…
Abstract
A vertical semiconductor triode includes a first layer of semiconductor material, the first layer including first and second surfaces, the first surface being in contact with a first electrode forming a Schottky contact.
Claims20
A device, comprising:
- a first semiconductor layer having a first surface and a second surface opposite to the first surface, the first semiconductor layer having a first conductivity type with a first concentration;
- a first region and a second region in the first semiconductor layer at the first surface, the first and second regions having the first conductivity type with a second concentration, the first region being spaced from the second region by a third region at the first surface of the first semiconductor layer having the first conductivity type with the first concentration;
- a second semiconductor layer on the second surface of the first semiconductor layer, the second semiconductor layer having a second conductivity type;
- a third semiconductor layer having the first conductivity type and is spaced from the first semiconductor layer by the second semiconductor layer, the third semiconductor layer having a third surface facing away from the first semiconductor layer;
- and
- a fourth region and a fifth region in the third semiconductor layer at the third surface, the fourth region and the fifth region having the first conductivity type with the second concentration.
3 more elements
A device, comprising:
- a first layer of a first conductivity type of a first concentration having a first surface and a second surface opposite to the first surface;
- a first region in the first layer and at the first surface, the first region having the first conductivity type of a second concentration, and the second concentration is greater than the first concentration;
- a second region in the first layer and at the first surface, the second region having the first conductivity type of the second concentration;
- a second layer of a second conductivity type on the second surface of the first layer, the second conductivity type being different than the first conductivity type;
- a third layer of the first conductivity type of the first concentration having a third surface and a fourth surface opposite to the third surface, the fourth surface having the first concentration of the first conductivity type, the third surface is covered by the second layer, and a third region in the fourth surface, and the third region has the first conductivity type of the second concentration;
- a first electrode on and abuts the first region and on the first surface;
- a second electrode on and abuts the second region and on the first surface;
- and
- a third electrode on the fourth surface, and the third electrode abuts the fourth surface of the third layer and abuts the third region in the fourth surface.
6 more elements
A device, comprising:
- a first layer of a first conductivity type of a first concentration;
- a first region in the first layer, the first region having the first conductivity type of a second concentration;
- a first electrode on the first layer and in contact with the first concentration and the second concentration;
- a second layer of the first conductivity type of the first concentration;
- a second region in the second layer, the second region having the first conductivity type of the second concentration;
- a second electrode on the second layer and in contact with the first concentration and the second concentration;
- a third region in the second layer having the second concentration, the third region being spaced from the second region;
- and
- a fourth region in the first layer and having the second concentration, the fourth region being spaced from the first region.
6 more elements
Dependencies are inferred from the claim text.