H10D 18/01
Manufacture or treatment
H10D18/01 (Manufacture or treatment) appears on 338 US grants and 303 published applications in this corpus.
Search patents in H10D- Granted patents
- 338
- Published applications
- 303
- Assignees
- 122
- Inventors
- 500
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 3 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 6 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 4 | 1 |
| 2002 | 3 | 4 |
| 2003 | 6 | 8 |
| 2004 | 10 | 3 |
| 2005 | 8 | 10 |
| 2006 | 6 | 6 |
| 2007 | 7 | 4 |
| 2008 | 5 | 2 |
| 2009 | 3 | 10 |
| 2010 | 5 | 5 |
| 2011 | 9 | 8 |
| 2012 | 9 | 16 |
| 2013 | 18 | 17 |
| 2014 | 18 | 23 |
| 2015 | 24 | 25 |
| 2016 | 29 | 21 |
| 2017 | 18 | 24 |
| 2018 | 18 | 19 |
| 2019 | 18 | 16 |
| 2020 | 20 | 19 |
| 2021 | 18 | 21 |
| 2022 | 13 | 14 |
| 2023 | 14 | 7 |
| 2024 | 10 | 10 |
| 2025 | 3 | 5 |
| 2026 | 1 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- High noise immunity TRIAC structure6 Oct 2026US 12,757,421 B2Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Power semiconductor device4 Nov 2025US 12,464,749 B2Hitachi Energy Ltd
- Method and device for producing an edge structure of a semiconductor component24 Jun 2025US 12,342,581 B2Infineon Technologies Bipolar GmbH & Co. KG
- Thyristor, triac and transient-voltage-suppression diode manufacturing18 Feb 2025US 12,230,698 B2STMicroelectronics (Tours) SAS
- System and method for bi-directional trench power switches19 Nov 2024US 12,148,819 B2Ideal Power Inc.
- Semiconductor device10 Sep 2026US 2026/0271319 A1Samsung Electronics Co., Ltd.
- Semiconductor device10 Sep 2026US 2026/0271320 A1Samsung Electronics Co., Ltd.
- Silicon controlled rectifier (scr), integrated circuit (ic) chip including scr, and methods of forming scr18 Jun 2026US 2026/0173540 A1GLOBALFOUNDRIES U. S. Inc.
- Method of making isolation structure thyristor16 Apr 2026US 2026/0107487 A1Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Esd solution for 3dic die-to-die interface26 Feb 2026US 2026/0059866 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Advanced methods for making semiconductor devices by low temperature direct bonding449US 6,153,495 AIntersil Corporation · 2000
- Vertical thyristor-based memory with trench isolation and its method of fabrication147US 7,456,439 B1T-RAM Semiconductor, Inc. · 2008
- Devices formable by low temperature direct bonding63US 6,274,892 B1Intersil Americas Inc. · 2001
- Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same59US 8,796,729 B2Analog Devices, Inc. · 2014
- Method for making vertical channel field controlled device employing a recessed gate structure58US 4,587,712 AGeneral Electric Company · 1986