System and method for bi-directional trench power switches
AssigneeIdeal Power Inc.
InventorsJiankang Bu, Constantin Bulucea, Alireza Mojab, Jeffrey Knapp, Robert Daniel Brdar
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Abstract
Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.
Claims17
A method of making a semiconductor device, the method comprising:
- doping to create an upper base region associated with a first side of a substrate of semiconductor material;
- etching the first side to create an upper-CE trench, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate;
- doping through the distal end of the upper-CE trench to create an upper collector-emitter region;
- doping to create a lower base region associated with a second side of the substrate;
- and
- doping to create a lower collector-emitter region associated with the second side.
A method of making a semiconductor device, the method comprising:
- doping to create an upper base region associated with a first side of a substrate of semiconductor material;
- etching the first side to create an upper-CE trench, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate;
- doping through the distal end of the upper-CE trench to create an upper collector-emitter region;
- doping to create a lower base region associated with a second side of the substrate;
- and
- etching the second side of the substrate of semiconductor material to create a lower-CE trench, the lower-CE trench defines a proximal opening at the second side and a distal end within the substrate;
- and
- doping through the distal end of the lower-CE trench to create a lower collector-emitter region.
Dependencies are inferred from the claim text.