H10D 18/40
Thyristors: with turn-on by field effect
Official title: with turn-on by field effect
H10D18/40 (Thyristors: with turn-on by field effect) appears on 314 US grants and 160 published applications in this corpus.
Search patents in H10D- Granted patents
- 314
- Published applications
- 160
- Assignees
- 133
- Inventors
- 399
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 3 | 0 |
| 1988 | 4 | 0 |
| 1989 | 3 | 0 |
| 1990 | 8 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 7 | 0 |
| 1994 | 16 | 0 |
| 1995 | 21 | 0 |
| 1996 | 14 | 0 |
| 1997 | 18 | 0 |
| 1998 | 15 | 0 |
| 1999 | 12 | 0 |
| 2000 | 4 | 0 |
| 2001 | 12 | 5 |
| 2002 | 8 | 6 |
| 2003 | 7 | 6 |
| 2004 | 8 | 8 |
| 2005 | 10 | 4 |
| 2006 | 4 | 8 |
| 2007 | 4 | 5 |
| 2008 | 7 | 8 |
| 2009 | 9 | 2 |
| 2010 | 3 | 0 |
| 2011 | 6 | 8 |
| 2012 | 7 | 5 |
| 2013 | 5 | 6 |
| 2014 | 4 | 7 |
| 2015 | 7 | 9 |
| 2016 | 12 | 12 |
| 2017 | 10 | 12 |
| 2018 | 10 | 12 |
| 2019 | 8 | 8 |
| 2020 | 7 | 7 |
| 2021 | 10 | 9 |
| 2022 | 5 | 6 |
| 2023 | 5 | 2 |
| 2024 | 5 | 3 |
| 2025 | 0 | 2 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Thyristor memory cell, thyristor memory array, and method for fabricating a thyristor memory array21 Jul 2026US 12,688,881 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Cell structure and its related semiconductor device26 Nov 2024US 12,154,977 B2Nanjing Sinnopower Technology Co., Ltd.
- Method for adjusting groove depth and method for manufacturing semiconductor device4 Jun 2024US 12,002,873 B2Fuji Electric Co., Ltd.
- Semiconductor memory device and structure9 Apr 2024US 11,956,952 B2Monolithic 3D Inc.
- Silicon-controlled rectifiers in a silicon-on-insulator technology19 Mar 2024US 11,935,946 B2GLOBALFOUNDRIES U. S. Inc.
- Power chip and bridge circuit16 Jan 2025US 2025/0023452 A1Delta Electronics (Shanghai) Co., Ltd.
- Thyristor memory cell, thyristor memory array, and method for fabricating a thyristor memory array9 Jan 2025US 2025/0014627 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ggnmos transistor structure, esd protection device and circuit22 Aug 2024US 2024/0282765 A1Csmc Technologies Fab2 Co., Ltd.
- Semiconductor memory devices11 Apr 2024US 2024/0119984 A1Samsung Electronics Co., Ltd.
- Gated protection device structures for an electrostatic discharge protection circuit7 Mar 2024US 2024/0079482 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches538US 6,229,161 B1Stanford University · 2001
- Thyristor-based memory and its method of operation283US 7,078,739 B1T-RAM Semiconductor, Inc. · 2006
- Grooved DMOS process with varying gate dielectric thickness209US 4,914,058 ASiliconix Incorporated · 1990
- Integrated power switch structure having a vertical thyristor controlled by a lateral MOS transistor168US 5,413,313 AFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. · 1995
- Stability in thyristor-based memory device166US 6,653,175 B1T-Ram, Inc. · 2003