Silicon-controlled rectifiers in a silicon-on-insulator technology

A method of forming a structure for a silicon-controlled rectifier, the method comprising:

• forming a first well in a semiconductor substrate beneath a dielectric layer on the semiconductor substrate, wherein the first well has a first conductivity type;
• forming a second well in the semiconductor substrate beneath the dielectric layer, wherein the second well has a second conductivity type opposite to the first conductivity type, and the second well adjoins the first well along a p-n junction;
• forming a first terminal above the dielectric layer, wherein the first terminal is coupled to the first well by a first connection having a first top surface above the dielectric layer, and the first connection extends from the first top surface through a thickness of the dielectric layer between the first terminal and the first well;
• and
• forming a second terminal above the dielectric layer, wherein the second terminal is coupled to the second well by a second connection having a second top surface above the dielectric layer, and the second connection extends from the second top surface through the thickness of the dielectric layer between the second terminal and the second well.