H10D 18/60
Gate-turn-off devices
Official title: Gate-turn-off devices
H10D18/60 (Gate-turn-off devices) appears on 619 US grants and 275 published applications in this corpus.
Search patents in H10D- Granted patents
- 619
- Published applications
- 275
- Assignees
- 153
- Inventors
- 641
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 5 | 0 |
| 1978 | 3 | 0 |
| 1979 | 7 | 0 |
| 1980 | 6 | 0 |
| 1981 | 6 | 0 |
| 1982 | 5 | 0 |
| 1983 | 5 | 0 |
| 1984 | 7 | 0 |
| 1985 | 9 | 0 |
| 1986 | 15 | 0 |
| 1987 | 11 | 0 |
| 1988 | 15 | 0 |
| 1989 | 21 | 0 |
| 1990 | 18 | 0 |
| 1991 | 18 | 0 |
| 1992 | 21 | 0 |
| 1993 | 13 | 0 |
| 1994 | 32 | 0 |
| 1995 | 29 | 0 |
| 1996 | 21 | 0 |
| 1997 | 20 | 0 |
| 1998 | 28 | 0 |
| 1999 | 19 | 0 |
| 2000 | 10 | 0 |
| 2001 | 10 | 6 |
| 2002 | 14 | 5 |
| 2003 | 10 | 10 |
| 2004 | 10 | 7 |
| 2005 | 10 | 7 |
| 2006 | 7 | 6 |
| 2007 | 5 | 10 |
| 2008 | 7 | 7 |
| 2009 | 6 | 3 |
| 2010 | 7 | 10 |
| 2011 | 4 | 3 |
| 2012 | 8 | 13 |
| 2013 | 14 | 12 |
| 2014 | 7 | 13 |
| 2015 | 12 | 16 |
| 2016 | 22 | 21 |
| 2017 | 14 | 18 |
| 2018 | 13 | 17 |
| 2019 | 22 | 25 |
| 2020 | 18 | 11 |
| 2021 | 13 | 12 |
| 2022 | 10 | 14 |
| 2023 | 11 | 8 |
| 2024 | 9 | 8 |
| 2025 | 6 | 10 |
| 2026 | 4 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Gate-commuted thyristor cell with a base region having a varying thickness8 Sep 2026US 12,733,225 B2Hitachi Energy Ltd
- Method of manufacturing silicon carbide substrate, silicon carbide single-crystal substrate and silicon carbide semiconductor device25 Aug 2026US 12,720,830 B2Denso Corporation
- Compositions and methods for marking hydrocarbon compositions with non-mutagenic dyes17 Mar 2026US 12,577,484 B2United Color Manufacturing, Inc.
- Insulated gate turn-off device with short channel PMOS transistor3 Mar 2026US 12,568,666 B2Pakal Technologies, Inc.
- Semiconductor device21 Oct 2025US 12,453,109 B2Silanna UV Technologies Pte Ltd
- Semiconductor device10 Sep 2026US 2026/0271319 A1Samsung Electronics Co., Ltd.
- Semiconductor device10 Sep 2026US 2026/0271320 A1Samsung Electronics Co., Ltd.
- Insulated-gate semiconductor device and method of manufacturing the same15 Jan 2026US 2026/0020314 A1Fuji Electric Co., Ltd.
- Bipolar junction device, and methods and switch assemblies using same25 Dec 2025US 2025/0392305 A1Ideal Power Inc.
- Insulated turn-off device with reduced sensitivity to variations in trench depth25 Sep 2025US 2025/0301677 A1Pakal Technologies, Inc.
Most cited
By later US patents
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012
- Method of maintaining the state of semiconductor memory having electrically floating body transistor337US 8,514,623 B2Zeno Semiconductor, Inc. · 2013
- Method of maintaining the state of semiconductor memory having electrically floating body transistor208US 8,208,302 B2Zeno Semiconductor, Inc. · 2012
- Integrated power switch structure having a vertical thyristor controlled by a lateral MOS transistor168US 5,413,313 AFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. · 1995
- Method of maintaining the state of semiconductor memory having electrically floating body transistor140US 8,937,834 B2Zeno Semiconductor, Inc. · 2015