Semiconductor device
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
Life of this patent
Estimating the term…
Abstract
A multilayered semiconductor diode device can include a substrate including silicon carbide (SiC) with an epitaxial drift layer including a first semiconductor oxide material above the SiC substrate with respect to a growth direction. The multilayered semiconductor diode device can further include a polar nitride layer including a polar semiconductor nitride material above the epitaxial drift layer with respect to the growth direction, and a metal layer above the polar nitride layer with respect to the growth direction.
Claims4
A multilayered semiconductor diode device comprising:
- a substrate comprising silicon carbide (SiC);
- an epitaxial drift layer comprising a first semiconductor oxide material, wherein the epitaxial drift layer is above the substrate with respect to a growth direction;
- a polar nitride layer comprising a polar semiconductor nitride material, wherein the polar nitride layer is above the epitaxial drift layer with respect to the growth direction;
- and
- a metal layer above the polar nitride layer with respect to the growth direction;
- wherein the epitaxial drift layer is doped n-type, wherein a polarization axis of the polar semiconductor nitride material is aligned with the growth direction such that the polar nitride layer comprises p-type charge, and wherein the polar nitride layer and the epitaxial drift layer form a p/n junction.
A multilayered semiconductor diode device comprising:
- a substrate comprising silicon carbide (SiC);
- an epitaxial drift layer comprising a first semiconductor oxide material, wherein the epitaxial drift layer is above the substrate with respect to a growth direction, and wherein the epitaxial drift layer is doped n-type;
- a template layer comprising a nitride template material, wherein the template layer is in contact with the epitaxial drift layer;
- a polar nitride layer comprising a polar semiconductor nitride material, wherein the polar nitride layer is in contact with the template layer, and wherein a polarization axis of the polar semiconductor nitride material is aligned with the growth direction such that the polar nitride layer comprises p-type charge, wherein the polar nitride layer and the epitaxial drift layer form a p/n junction;
- and
- a metal layer above the polar nitride layer.
Dependencies are inferred from the claim text.