H10D 18/211
Thyristors: having built-in localised breakdown or breakover regions
Official title: {having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing}
H10D18/211 (Thyristors: having built-in localised breakdown or breakover regions) appears on 70 US grants and 47 published applications in this corpus.
Search patents in H10D- Granted patents
- 70
- Published applications
- 47
- Assignees
- 40
- Inventors
- 129
- Latest grant
- 3 Jun 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 4 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 4 | 0 |
| 1991 | 3 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 1 |
| 2003 | 1 | 1 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 2 |
| 2014 | 0 | 3 |
| 2015 | 2 | 4 |
| 2016 | 3 | 3 |
| 2017 | 4 | 6 |
| 2018 | 6 | 7 |
| 2019 | 3 | 2 |
| 2020 | 5 | 4 |
| 2021 | 5 | 3 |
| 2022 | 2 | 5 |
| 2023 | 3 | 1 |
| 2024 | 5 | 2 |
| 2025 | 2 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Imaging element, stacked-type imaging element and solid-state imaging apparatus3 Jun 2025US 12,324,262 B2Sony Group Corporation
- Electrostatic protection element21 Jan 2025US 12,206,017 B2Kabushiki Kaisha Tokai Rika Denki Seisakusho
- ESD protection circuit with isolated SCR for negative voltage operation6 Aug 2024US 12,057,443 B2Texas Instruments Incorporated
- Ruggedized symmetrically bidirectional bipolar power transistor7 May 2024US 11,978,788 B2Ideal Power Inc.
- Power semiconductor component for voltage limiting, arrangement having two power semiconductor components, and a method for voltage limiting30 Apr 2024US 11,973,147 B2Infineon Technologies Bipolar GmbH & Co. KG
- Silicon controlled rectifier (scr), integrated circuit (ic) chip including scr, and methods of forming scr18 Jun 2026US 2026/0173540 A1GLOBALFOUNDRIES U. S. Inc.
- Imaging element, stacked-type imaging element and solid-state imaging apparatus21 Mar 2024US 2024/0096914 A1Sony Group Corporation
- Semiconductor device22 Feb 2024US 2024/0063265 A1
- Ruggedized symmetrically bidirectional bipolar power transistor21 Sep 2023US 2023/0299188 A1Ideal Power Inc.
- Etch stop layer for injecting carriers into drift layer for a vertical power device27 Oct 2022US 2022/0344498 A1Pakal Technologies, Inc.
Most cited
By later US patents
- Self-protection against breakover turn-on failure in thyristors through selective base lifetime control24US 4,165,517 AElectric Power Research Institute, Inc. · 1979
- Semiconductor device with overvoltage protective function22US 5,243,205 AKabushiki Kaisha Toshiba · 1993
- Process for manufacturing a thyristor with proton irradiation17US 4,987,087 ASiemens Aktiengesellschaft · 1991
- Self-protected semiconductor device13US 4,012,761 AGeneral Electric Company · 1977
- Thyristor with a self-protection function for breakover turn-on failure13US 4,646,121 ATokyo Shibaura Denki Kabushiki Kaisha · 1987