Electrostatic protection element

An electrostatic protection element comprising:

• a first impurity layer, having a second conductivity type, formed on a main face of a semiconductor substrate having a first conductivity type;
• a second impurity layer, having the first conductivity type, formed within the first impurity layer;
• a first contact layer, having the first conductivity type, formed in a region within the first impurity layer other than at the second impurity layer;
• a second contact layer and a third contact layer, both having the second conductivity type, formed within the second impurity layer;
• multilayer wiring connected through a stack structure to the first contact layer, the second contact layer, and the third contact layer,
• wherein the stack structure includes:
• a first layer wiring connected to each of the first contact layer, the second contact layer, and the third contact layer, and
• a second layer wiring connected to the first layer wiring directly above each of the first contact layer, the second contact layer, and the third contact layer;
• and
• a trigger structure configured by the second impurity layer and a third impurity layer of the second conductivity type, the third impurity layer being formed at a periphery of the second contact layer and has a lower impurity concentration than the second contact layer.