Self-protected semiconductor device
AssigneeGeneral Electric Company
InventorsArmand P. Ferro, Victor A. K. Temple
Life of this patent
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Abstract
A self-protected thyristor structure is provided having an auxiliary gate region peripherally located with respect to the semiconductor device so as to provide for the controlled turn-on of the device at the edge thereof in response to increasing edge current densities at the onset of avalanche breakdown. An auxiliary pilot thyristor is provided substantially surrounding the main thyristor structure and including an annular gate electrode surrounding the auxiliary pilot thyristor structure to insure that turn-on occurs substantially simultaneously throughout the extent of the pilot thyristor region.
Claims14
A self-protected semiconductor device comprising:
- a main thyristor section;
- a pilot thyristor section operatively associated with said main thyristor section to turn on said main thyristor section when said pilot thyristor section is turned on,
- first gate means operatively associated with said pilot thyristor section for turning said pilot thyristor section on in response to the application of a gate signal to said gate means;
- an auxiliary pilot thyristor section surrounding said main thyristor section for turning on said main thyristor section when said auxiliary pilot thyristor section is turned on;
- second gate means surrounding said auxiliary pilot thyristor section for turning on said auxiliary pilot thyristor section in response to leakage currents generated at the onset of avalanche voltage breakdown of the device.
In an amplifying gate thyristor of the type including a main thyristor section and a pilot thyristor section operatively associated therewith for turning on said main thyristor section in response to a turn on signal applied to a gate region of said pilot thyristor section;
- the improvement comprising:
- an auxiliary pilot thyristor disposed peripherally to said main thyristor section, said auxiliary pilot thyristor including auxiliary gate region means responsive to edge leakage currents generated at the onset of avalanche voltage breakdown of said amplifying gate thyristor, to turn on said auxiliary pilot thyristor thereby turning on said main thyristor and protecting said device from destructive breakdown.
Dependencies are inferred from the claim text.