H10D 18/221
Thyristors: having amplifying gate structures
Official title: {having amplifying gate structures, e.g. cascade configurations}
H10D18/221 (Thyristors: having amplifying gate structures) appears on 106 US grants and 34 published applications in this corpus.
Search patents in H10D- Granted patents
- 106
- Published applications
- 34
- Assignees
- 50
- Inventors
- 158
- Latest grant
- 24 Mar 2026
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| 2023 | 3 | 0 |
| 2024 | 1 | 1 |
| 2025 | 1 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Light detection and ranging (LIDAR) sensor system including integrated light source24 Mar 2026US 12,585,004 B1Aurora Operations, Inc.
- Bidirectional thyristor device30 Dec 2025US 12,513,928 B2Hitachi Energy Ltd
- Light detection and ranging (LIDAR) sensor system including integrated light source26 Mar 2024US 11,940,567 B1Aurora Operations, Inc.
- Power semiconductor device having overvoltage protection and method of manufacturing the same12 Dec 2023US 11,843,045 B2Infineon Technologies Austria AG
- Short-circuit semiconductor component and method for operating it30 May 2023US 11,664,445 B2Infineon Technologies Bipolar GmbH & Co. KG
- Power chip and bridge circuit16 Jan 2025US 2025/0023452 A1Delta Electronics (Shanghai) Co., Ltd.
- Bidirectional thyristor device1 Feb 2024US 2024/0038880 A1Hitachi Energy Switzerland AG
- Short-circuit semiconductor component and method for operating same25 Nov 2021US 2021/0367067 A1Infineon Technologies Bipolar GmbH & Co. KG
- Short-circuit semiconductor component and method for operating it4 Feb 2021US 2021/0036136 A1Infineon Technologies Bipolar GmbH & Co. KG
- Power chip and bridge circuit14 Jan 2021US 2021/0013793 A1Delta Electronics (Shanghai) Co., Ltd.
Most cited
By later US patents
- Sensitive thyristor with integrated gate-cathode decoupling47US 4,949,147 AThomson-CSF · 1990
- Gate turn-off thyristor with independent turn-on/off controlling transistors45US 4,760,431 AKabushiki Kaisha Toshiba · 1988
- Breakover-triggered dipole component having a controlled sensitivity34US 5,861,639 ASGS-Thomson Microelectronics S.A. · 1999
- Gate turn-off thyristor with independent turn-on/off controlling transistors26US 4,914,496 AKabushiki Kaisha Toshiba · 1990
- Five layer semiconductor device with separate insulated turn-on and turn-off gates22US 4,604,638 AKabushiki Kaisha Toshiba · 1986