Power semiconductor device having overvoltage protection and method of manufacturing the same

A method of processing an overvoltage protection power semiconductor chip, comprising:

• providing a semiconductor body to be coupled to a first load terminal and a second load terminal of the overvoltage protection power semiconductor chip, the first load terminal to be arranged at a frontside and the second load terminal to be arranged at a backside of the overvoltage protection power semiconductor chip, and wherein the semiconductor body comprises each of an active region and an inactive edge region that surrounds the active region,
• forming, in the active region a plurality of breakthrough cells, each breakthrough cell comprising an insulation structure arranged at the frontside and having a recess into which the first load terminal is to extend and to interface with the semiconductor body;
• forming a drift region having dopants of a first conductivity type;
• forming an anode region having dopants of a second conductivity type, the anode region being electrically connected to the first load terminal and disposed in contact with the first load terminal;
• forming a first barrier region having dopants of the second conductivity type at a lower dopant concentration than the anode region and arranged in contact with each of the anode region and the insulation structure, wherein the first barrier region forms a contiguous semiconductor layer throughout the plurality of breakthrough cells;
• forming a second barrier region having dopants of the first conductivity type at a higher dopant concentration than the drift region and separating each of the anode region and at least a part of the first barrier region from the drift region;
• and
• forming a doped contact region arranged in contact with the second load terminal, wherein the drift region is positioned between the second barrier region and the doped contact region.