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AssigneeInfineon Technologies Bipolar GmbH & Co. KG
InventorsMario SCHENK, Reiner BARTHELMESS, Peter WEIDNER, Dirk PIKORZ, Markus DROLDNER, Michael STELTE, Harald NÜBEL, Uwe KELLNER-WERDEHAUSEN, Christof DRILLING, Jens PRZYBILLA
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A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second complementary conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode, and the front-side base region is electrically connected to a front-side electrode. A turn-on structure, which is an emitter structure of the second conduction type, is embedded into the front-side base region and/or rear-side base region and is covered by the respective electrode and is electrically contacted with the electrode placed on the base region respectively embedding it. It can be turned on by a trigger structure which can be activated by an electrical turn-on signal. In the activated state, the trigger structure injects an electrical current surge into the semiconductor body, which irreversibly destroys a semiconductor junction.
A short-circuit semiconductor component comprising a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are successively arranged in a vertical direction starting from a rear side with a rear-side center determined by its geometric center of gravity towards a front side, which is opposite to the rear side, with a front-side center determined by its geometric center of gravity, wherein the rear-side base region is connected in an electrically conductive manner to a rear-side electrode with a lateral rear-side electrode width (WER) determined by its lateral extent, which is applied to the rear side, and the front-side base region is connected in an electrically conductive manner to a front-side electrode with a lateral front-side electrode width (WEV) determined by its lateral extent, which is applied to the front side, wherein at least one front-side turn-on structure is embedded in the front-side base region and at least partially covered by the front-side electrode and/or at least one rear-side turn-on structure is embedded in the rear-side base region and at least partially covered by the rear-side electrode, wherein the respective turn-on structure is an emitter structure of the second conductive type, which is contacted in an electrically conductive manner to the electrode applied to the base region respectively embedding it and which can be turned on by means of at least one trigger structure which, via the semiconductor body , acts on it electrically and which can be activated in turn by means of an electrical turn-on signal supplied to it,
A method for operating a short-circuit semiconductor component (comprising a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are successively arranged in a vertical direction starting from a rear side with a rear-side center determined by its geometric center of gravity towards a front side, which is opposite to the rear side, with a front-side center determined by its geometric center of gravity, wherein the rear-side base region is connected in an electrically conductive manner to a rear-side electrode with a lateral rear-side electrode width (WER) determined by its lateral extent, which is applied to the rear side, and the front-side base region is connected in an electrically conductive manner to a front-side electrode with a lateral front-side electrode width (WEV) determined by its lateral extent, which is applied to the front side, wherein at least one front-side turn-on structure is embedded in the front-side base region and at least partially covered by the front-side electrode and/or at least one rear-side turn-on structure is embedded in the rear-side base region and at least partially covered by the rear-side electrode, wherein the respective turn-on structure is an emitter structure of the second conductive type, which is contacted in an electrically conductive manner to the electrode applied to the base region respectively embedding it and which can be turned on by means of at least one trigger structure which, via the semiconductor body, acts on it electrically and which can be activated in turn by means of an electrical turn-on signal supplied to it,
Dependencies are inferred from the claim text.