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AssigneeInfineon Technologies Bipolar GmbH & Co. KG
InventorsUwe KELLNER-WERDEHAUSEN, Michael STELTE, Markus DROLDNER, Dirk PIKORZ, Peter WEIDNER, Reiner BARTHELMESS, Mario SCHENK, Jens PRZYBILLA
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A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode with a rear-side electrode width, and the front-side base region is electrically connected to a front-side electrode with a front-side electrode width. A turn-on structure with a turn-on structure width is embedded into the front-side and/or rear-side base region and is covered by the respective electrode. The turn-on structure is configured to be turned on depending on a supplied turn-on signal and to produce, on a one-off basis, an irreversible, low-resistance connection between the two electrodes. The ratio of the turn-on structure width to the respective electrode width is less than 1.
A short-circuit semiconductor component comprising a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are successively arranged in a vertical direction starting from a rear side with a rear-side center determined by its geometric center of gravity towards a front side, which is opposite to the rear side, with a front-side center determined by its geometric center of gravity, wherein the rear-side base region is connected in an electrically conductive manner to a rear-side electrode with a lateral rear-side electrode width (WER) determined by its lateral extent, which is applied to the rear side, and the front-side base region is connected in an electrically conductive manner to a front-side electrode with a lateral front-side electrode width (WEV) determined by its lateral extent, which is applied to the front side, wherein at least one front-side turn-on structure with a lateral front-side turn-on structure width (WSV) determined by its lateral extent is embedded in the front-side base region and at least partially covered by the front-side electrode and/or at least one rear-side turn-on structure with a lateral rear-side turn-on structure width (WSR) determined by its lateral extent is embedded in the rear-side base region and at least partially covered by the rear-side electrode, wherein the turn-on structure is configured and arranged in such a way that it is turned on depending on a predeterminable turn-on signal supplied to the semiconductor body and produces, on a one-off basis, a permanent, irreversible, electrically conductive, low-resistance connection between the front-side electrode and the rear-side electrode,
A method for operating a short-circuit semiconductor component comprising a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are successively arranged in a vertical direction starting from a rear side with a rear-side center determined by its geometric center of gravity towards a front side, which is opposite to the rear side, with a front-side center determined by its geometric center of gravity, wherein the rear-side base region is connected in an electrically conductive manner to a rear-side electrode with a lateral rear-side electrode width (WER) determined by its lateral extent, which is applied to the rear side, and the front-side base region is connected in an electrically conductive manner to a front-side electrode with a lateral front-side electrode width (WEV) determined by its lateral extent, which is applied to the front side, wherein at least one front-side turn-on structure with a lateral front-side turn-on structure width (WSV) determined by its lateral extent is embedded in the front-side base region and at least partially covered by the front-side electrode and/or at least one rear-side turn-on structure with a lateral rear-side turn-on structure width (WSR) determined by its lateral extent is embedded in the rear-side base region and at least partially covered by the rear-side electrode, wherein, if the front-side turn-on structure is present, the ratio of the lateral front-side turn-on structure width (WSV) to the lateral front-side electrode width (WEV) is set to be less than 1 and, if the rear-side turn-on structure is present, the ratio of the lateral rear-side turn-on structure width (WSR) to the lateral rear-side electrode width (WER) is set to be less than 1, so that, in a non-short-circuited operational state, an electrical voltage present between the front-side electrode and the rear-side electrode is blocked with long-term stability in both polarities and, in a short-circuit operational state, the semiconductor body is supplied on a one-off basis with a predeterminable turn-on signal, which turns on the correspondingly configured and arranged turn-on structure, whereby a permanent, irreversible, electrically conductive, low-resistance connection is produced in the form of a fused portion between the front-side electrode and the rear-side electrode, as a consequence of the current flow caused by the electrical voltage present between them wherein the turn-on structure is an emitter structure of the second conduction type (n), which is embedded into the front-side or rear-side base region and contacted in an electrically conductive manner with the electrode applied to the respective base region, and which can be turned on by means of at least one trigger structure which, via the semiconductor body, acts on it electrically, wherein the trigger structure is activated in turn by means of the turn-on signal,
Dependencies are inferred from the claim text.