H10D 12/411
Insulated-gate bipolar transistors [igbt]
Official title: {Insulated-gate bipolar transistors [IGBT]}
H10D12/411 (Insulated-gate bipolar transistors [igbt]) appears on 5,911 US grants and 6,650 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,911
- Published applications
- 6,650
- Assignees
- 592
- Inventors
- 4,993
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 4 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 8 | 0 |
| 1987 | 11 | 0 |
| 1988 | 8 | 0 |
| 1989 | 11 | 0 |
| 1990 | 24 | 0 |
| 1991 | 37 | 0 |
| 1992 | 31 | 0 |
| 1993 | 31 | 0 |
| 1994 | 41 | 0 |
| 1995 | 40 | 0 |
| 1996 | 48 | 0 |
| 1997 | 48 | 0 |
| 1998 | 76 | 0 |
| 1999 | 60 | 0 |
| 2000 | 74 | 0 |
| 2001 | 67 | 27 |
| 2002 | 60 | 70 |
| 2003 | 71 | 67 |
| 2004 | 81 | 76 |
| 2005 | 63 | 101 |
| 2006 | 59 | 88 |
| 2007 | 57 | 127 |
| 2008 | 50 | 121 |
| 2009 | 81 | 130 |
| 2010 | 119 | 168 |
| 2011 | 135 | 166 |
| 2012 | 151 | 216 |
| 2013 | 182 | 233 |
| 2014 | 227 | 336 |
| 2015 | 341 | 467 |
| 2016 | 381 | 532 |
| 2017 | 457 | 489 |
| 2018 | 424 | 464 |
| 2019 | 444 | 443 |
| 2020 | 382 | 365 |
| 2021 | 327 | 328 |
| 2022 | 272 | 367 |
| 2023 | 229 | 354 |
| 2024 | 212 | 336 |
| 2025 | 269 | 328 |
| 2026 | 208 | 251 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 12/441Vertical igbts5,203
- H10D 12/421On insulating layers or insulating substrates291
- H10D 12/415Having edge termination structures43
- H10D 12/417Having a drift region having a doping concentration that is higher at18
- H10D 12/416Bidirectional devices10
- H10D 12/418Having a drift region having a doping concentration that is higher at8
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Insulating-gate bipolar transistors including a reverse conducting diode29 Sep 2026US 12,751,025 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device, semiconductor device control method, and semiconductor device manufacturing method to increase allowable range of transition time difference between two signals29 Sep 2026US 12,751,026 B2Mitsubishi Electric Corporation
- Semiconductor device8 Oct 2026US 2026/0312580 A1Fuji Electric Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0313992 A1Fuji Electric Co., Ltd.
- Double gate transistor device and method of operating1 Oct 2026US 2026/0303088 A1Infineon Technologies Austria AG
- Igbt device and cell structure thereof, and manufacturing method for cell structure1 Oct 2026US 2026/0304869 A1Gree Electric Appliances, Inc. of Zhuhai
- Method of forming a recessed terminal and electronic device including the recessed terminal1 Oct 2026US 2026/0304881 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012
- Method of maintaining the state of semiconductor memory having electrically floating body transistor337US 8,514,623 B2Zeno Semiconductor, Inc. · 2013
- Integrated circuit including inverted dielectric isolation331US 6,084,284 A2000
- Power IC having SOI structure283US 6,130,458 AKabushiki Kaisha Toshiba · 2000
- Lateral transistor on polymer280US 8,835,978 B2Infineon Technologies AG · 2014