H10D 12/00
Bipolar devices controlled by the field effect
Official title: Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
H10D12/00 (Bipolar devices controlled by the field effect) appears on 8,952 US grants and 9,966 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,952
- Published applications
- 9,966
- Assignees
- 990
- Inventors
- 7,775
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 5 | 0 |
| 1978 | 1 | 0 |
| 1979 | 4 | 0 |
| 1980 | 9 | 0 |
| 1981 | 3 | 0 |
| 1982 | 13 | 0 |
| 1983 | 10 | 0 |
| 1984 | 10 | 0 |
| 1985 | 6 | 0 |
| 1986 | 21 | 0 |
| 1987 | 17 | 0 |
| 1988 | 14 | 0 |
| 1989 | 35 | 0 |
| 1990 | 42 | 0 |
| 1991 | 53 | 0 |
| 1992 | 51 | 0 |
| 1993 | 44 | 0 |
| 1994 | 59 | 0 |
| 1995 | 67 | 0 |
| 1996 | 68 | 0 |
| 1997 | 77 | 0 |
| 1998 | 103 | 0 |
| 1999 | 91 | 0 |
| 2000 | 108 | 0 |
| 2001 | 111 | 45 |
| 2002 | 88 | 108 |
| 2003 | 108 | 105 |
| 2004 | 106 | 117 |
| 2005 | 99 | 147 |
| 2006 | 93 | 148 |
| 2007 | 91 | 194 |
| 2008 | 85 | 210 |
| 2009 | 130 | 224 |
| 2010 | 212 | 275 |
| 2011 | 207 | 302 |
| 2012 | 242 | 385 |
| 2013 | 326 | 414 |
| 2014 | 416 | 532 |
| 2015 | 530 | 667 |
| 2016 | 570 | 737 |
| 2017 | 647 | 681 |
| 2018 | 594 | 647 |
| 2019 | 630 | 627 |
| 2020 | 554 | 538 |
| 2021 | 454 | 467 |
| 2022 | 410 | 524 |
| 2023 | 322 | 527 |
| 2024 | 327 | 553 |
| 2025 | 391 | 469 |
| 2026 | 297 | 323 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- SRAM with staggered stacked FET6 Oct 2026US 12,757,370 B2International Business Machines Corporation
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- GaN power device and manufacturing method thereof6 Oct 2026US 12,757,448 B2Peking University
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Silicon carbide semiconductor device and manufacturing method therefor6 Oct 2026US 12,757,464 B2Hubei Jiufengshan Laboratory
- Semiconductor device8 Oct 2026US 2026/0312580 A1Fuji Electric Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0313992 A1Fuji Electric Co., Ltd.
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Double gate transistor device and method of operating1 Oct 2026US 2026/0303088 A1Infineon Technologies Austria AG
- Field effect transistor1 Oct 2026US 2026/0304861 A1Denso Corporation
Most cited
By later US patents
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Semiconductor power devices with alternating conductivity type high-voltage breakdown regions484US 5,216,275 AUniversity of Electronic Science and Technology of China · 1993
- Advanced methods for making semiconductor devices by low temperature direct bonding449US 6,153,495 AIntersil Corporation · 2000
- Enhanced mobility MOSFET device and method441US 5,683,934 AMotorola, Inc. · 1997
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012